ALR175

ALR175 ASI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 1

Technical content

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCES IC = 100 mA 65 V BVEBO IE = 10 mA 3.5 V ICES VCE = 40 V 25 mA hFE VCE = 5.0 V IC = 5.0 A 15 150 --- PG ηηηηC POUT VCC = 40 V PIN = 30 W f = 1.215 to 1.4 GHz 7.3 160 7.8 180 dB W NPN SILICON RF POWER TRANSISTOR ALR175 DESCRIPTION: The ASI ALR175 is common Base transistor Designed for 1215 – 1400 MHz, L-Band Applications. FEATURES:

• Internal Input/Output Matching Network
• PG = 7.3 dB at 30 W/1400 MHz
• Omnigold™ Metalization System MAXIMUM RATINGS IC 14 A VCC 45 V PDISS 330 W @ TC = 25 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θθθθJC 0.45 °C/W PACKAGE STYLE .400 2L FLG (A) MINIMUM inches / mm .100 / 2.54 .376 / 9.55 .050 / 1.27 .110 / 2.79 B C D E F G A MAXIMUM .120 / 3.05 .130 / 3.30 .396 / 10.06 inches / mm .193 / 4.90 H DIM K L I J .490 / 12.45 .690 / 17.53 .003 / 0.08 .510 / 12.95 .710 / 18.03 .006 / 0.18 N M P .230 / 5.84 G C N 2xR 4x .062 x 45° I E P M F L H J K 2xB D .040 x 45°A .100 / 2.54 .395 / 10.03 .407 / 10.34 .890 / 22.61 .910 / 23.11