ALR100_10 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCES IC = 100 mA 65 V BVEBO IE = 10 mA 3.5 V ICES VCE = 32 V 20 mA hFE VCE = 5.0 V IC = 5.0 A 15 --- --- PG ηC VCC = 28 V POUT = 100 W f = 1.2 to 1.4 GHz 6.0 dB NPN SILICON RF POWER TRANSISTOR ALR100 DESCRIPTION: The ASI ALR100 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES:
- Internal Input/Output Matching Network
- PG = 6.0 dB at 100 W/1400 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 13.5 A VCC 32 V PDISS 270 W @ TC = 25 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θJC 0.55 °OC/W PACKAGE STYLE .400 2L FLG 1 = COLLECTOR 2&3 = BASE 4 = EMITTER ORDER CODE: ASI10514 MINIMUM inches / mm .395 / 10.03 .140 / 3.56 B C D E F G A MAXIMUM .230 / 5.84 .407 / 10.34 inches / mm H .118 / 3.00 .131 / 3.33 DIM K L I J .386 / 9.80 O P Q R N M .450 / 11.43 .050 / 1.27 .110 / 2.80 .193 / 4.90 .900 / 22.86 .650 / 16.51 .063 / 1.60 .125 / 3.18 .170 / 4.32 .062 / 1.58 .405 / 10.29 .110 / 2.80 J PG M C B D HF N Q I O K E Ø.120 A .062 x 45° R L 2 3