ALN64535 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS ICBO VCB = 8 V 100 nA IEBO VEB = 1.0 V 1.0 µµµµA hFE VCE = 8.0 V IC = 7.0 mA 50 250 --- CCB VCB = 10 V 0.6 pF ft VCE = 10 V IC = 20 mA f = 1.0 GHz 8.0 8.5 GHz S212 VCE = 8 V IC = 20 mA f = 2.0 GHz 10 11 dB NF GA VCE = 8 V IC = 10 mA f = 2.0 GHz 1.6 2.5 dB NPN SILICON LOW NOISE RF TRANSISTOR ALN64535 DESCRIPTION: The ALN64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. FEATURES INCLUDE:

  • NF = 1.6 dB Typical @ 2 GHz
  • Hermetic Ceramic Package MAXIMUM RATINGS IC 60 mA VCBO 25 V VCEO 12 V VEBO 1.5 V PDISS 300 mW @ TA ≤ 75 O C TJ -65 O C to +200 O C TSTG -65 O C to +150 O C θθθθJC 85 O C/W PACKAGE STYLE SS35 1 = Base 2 & 4 = Emitter 3 = Collector