AGR26180EF TRIQUINT | Alldatasheet
Document overview
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Technical content
Features
Typical performance for MMDS systems. f = 2600 MHz, IDQ = 1700 mA, Vds = 28 V, adjacent channel BW = 3.84 MHz, 5 MHz offset; alternate channel BW = 3.84 MHz, 10 MHz offset. Typical P/A ratio of 9.8 dB at 0.01% (probability) CCDF*: — O utput power: 27 W. — P ower gain: 12.5 dB. — Ef ficiency: 20%. — AC PR: –33 dBc. — AC LR1: –35 dBc. — Re turn loss: –12 dB. Typical pulsed P1dB, 6 µs pulse at 10% duty: 185 W. High-reliability, gold-metalization process. Hot carrier injection (HCI) induced bias drift of <5% over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2600 MHz, 180 W output power pulsed 4 µs at 10% duty. Large signal impedance parameters available. *The test signal utilized is 4-channel W-CDMA Test Model 1. This test signal provides an equivalent reference (occupied bandwidth and waveform EPF) for the actual performance with an MMDS waveform. Table 1. Thermal Characteristics Table 2. Absolute Maximum Ratings* Table 3. ESD Rating* JESD22-C101A (CDM) standards.
180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET May 2004 AGR26180EF Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Table 5. RF Characteristics POUT = 27 W average. Nominal operating voltage 28 Vdc. Power Output, 1 dB Compression Point, pulsed 4 µs at 10% duty.
Figure 2. Component Layout /uni25A0Fair-Rite® ferrite bead L1, L2: 2512067007Y3. 1 oz. copper, 30 mil thickness, εr = 3.5.
ZS = Test circuit impedance as measured from gate to gate, balanced configuration. ZL = Test circuit impedance as measured from drain to drain, balanced configuration. Figure 3. Series Equivalent Balanced Input and Output Impedances
Two-tone measurement @ POUT = 160 W (PEP). Figure 10. IMD vs. Tone Separation
Preliminary Data Sheet AGR26180EF May 2004 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. Label Notes: /uni25A0M before the part number denotes model program. X bef ore the part number denotes engineering prototype. /uni25A0The last two letters of the part number denote wafer technology and package type. /uni25A0YYWWLL is the date code including place of ma nufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand). XXXXX = five-digit wafer lot number. /uni25A0ZZZZZZZ = seven-digit assembly lot number on production parts. /uni25A0ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. PINS: 1A. DRAIN 1B. DRAIN 2A. GATE 2B. GATE 3. SOURCE1A 1B 2A 2B AGR19K180U YYWWLL XXXXX ZZZZZZZ PEAK DEVICES AGR26180XF YYWWLL XXXXX ZZZZZZZ