AGR21030EF TRIQUINT | Alldatasheet
Document overview
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Technical content
Features
Typical performance for 2 carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adja- cent channel BW = 3.84 MHz at F1 – 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 – 10 MHz and F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01% (probability) CCDF: — O utput power: 7 W. — P ower gain: 14.5 dB. — Ef ficiency: 26%. — IM 3: –34 dBc. — A CPR: –37 dBc. — Re turn loss: –12 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand a 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 2140 MHz, 30 W continu- ous wave (CW) output power. Large signal impedance parameters available. Table 1. Thermal Characteristics Table 2. Absolute Maximum Ratings* Table 3. ESD Rating* JESD22-C101A (CDM) standards.
30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET AGR21030EF
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Table 5. RF Characteristics
- 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135 MHz, and f2 = 2145 MHz.
VDD = 28 Vdc, IDQ = 300 mA, and POUT = 7 W avg. Nominal operating voltage 28 Vdc. Qualified for a maximum operating voltage of 32 Vdc ±0.5 V. ψ No degradation in output power.
/uni25A0Vitramon® 1206 capacitor: C3, C7: 22,000 pF. /uni25A0Sprague® tantalum capacitor: C4, C10: 22 µF, 35 V. /uni25A0Fair-Rite® ferrite bead: FB1 2743019447. /uni25A01206 size chip resistor: R1 12 Ω. /uni25A0Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5. Figure 2. AGR21030EF Test Circuit
30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. AGR21030EF Label Notes: /uni25A0M before the part number denotes model program. X bef ore the part number denotes engineering prototype. /uni25A0The last two letters of the part number denote wafer technology and package type. /uni25A0YYWWLL is the date code including place of ma nufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand). XXXXX = five-digit wafer lot number. /uni25A0ZZZZZZZ = seven-digit assembly lot number on production parts. /uni25A0ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. A AGR21045F YYWWLL ZZZZZZZ PINS: 1. DRAIN 2. GATE 3. SOURCEPEAK DEVICES AGR21030XF YYWWLL XXXXX ZZZZZZZ
Figure 10. AM-AM and AM-PM Characteristics
30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. AGR21030EF Label Notes: /uni25A0M before the part number denotes model program. X bef ore the part number denotes engineering prototype. /uni25A0The last two letters of the part number denote wafer technology and package type. /uni25A0YYWWLL is the date code including place of ma nufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand). XXXXX = five-digit wafer lot number. /uni25A0ZZZZZZZ = seven-digit assembly lot number on production parts. /uni25A0ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. A AGR21045F YYWWLL ZZZZZZZ PINS: 1. DRAIN 2. GATE 3. SOURCEPEAK DEVICES AGR21030XF YYWWLL XXXXX ZZZZZZZ