AGN1440 ASB | Alldatasheet
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Technical content
1/11 ASB Inc. sales@asb.co.kr June 2015 AGN1440 1. Product Overview
1.1 General Description
AGN1440 is a two-stage internally matched GaN MMIC Power Amplifier which operates between 13.75GHz and 14.50 GHz frequency range. This product is well suited for VSAT applications.
1.2 Features
Frequency Range: 13.75 - 14.50 GHz Saturated Output Power: 41 dBm Power Added Efficiency: 28 % Small Signal Gain: 18.5 dB Output Third Order Intercept Point: 43 dBm Bias: VDD = +28 V, IDD = 350 mA, VGG = -2.8 V (Typical) 100% DC and RF tested
1.3 Applications
Ku Band VSAT Point to Point Radio
1.4 Package Profile & RoHS Compliance
10-lead Flange Package RoHS-compliant AGN1440 Data Sheet Ku Band GaN Power Amplifier MMIC
2/11 ASB Inc. sales@asb.co.kr June 2015 AGN1440 2. Summary on Product Performances
2.1 Typical Performance
Test conditions : T = +25 C, VDD = +28 V, CW, ZO = 50 Parameters Test Conditions Min Typ Max Units Gate Bias Voltage f = 13.75 - 14.50 GHz -2.8 -2.5 V Output Power at Psat1) f = 13.75 - 14.50 GHz 39 41 dBm Power Gain at Psat1) f = 13.75 - 14.50 GHz 9 11 dB Drain Current at Psat1) f = 13.75 - 14.50 GHz 1700 1900 mA Power Added Efficiency at Psat1) f = 13.75 - 14.50 GHz 28 % Gain Flatness f = 13.75 - 14.50 GHz 0.5 1.0 dB Input Return Loss f = 13.75 - 14.50 GHz -10 -6 dB Output Return Loss f = 13.75 - 14.50 GHz -14 -10 dB Output TOI2) Δf = 10 MHz 2-Tone Test Output power / Tone = +32 dBm 43 dBm Supply Current VDD = +28 V 350 mA 1) Psat: Saturated output power 2) TOI: Third order intercept point
2.2 Product Specification
Test conditions : T = +25 C, VDD= +28 V, CW, VGG = -2.8 V typical, ZO = 50 Parameter Min Typ Max Unit Frequency 13.75 14.50 GHz Small Signal Gain 18 18.5 dB Input Return Loss -10 -6 dB Output Return Loss -14 -10 dB Supply Current 350 mA
2.3 Absolute Maximum Ratings
Parameters Max. Ratings Operating Case Temperature (Tc) -40 to 85 C Storage Temperature (Tstg) -55 to 125 C Drain Voltage (VDD) +35 V Gate Voltage (VGG) -5.0 to -2.5 V Input RF Power (Pin) +35 dBm
3/11 ASB Inc. sales@asb.co.kr June 2015 AGN1440
2.4 Pin Descriptions
1,5 Vg Gate voltage
3 RF IN Input, matched to 50 ohms
6,10 Vd Drain voltage
8 RF OUT Output, matched to 50 ohms
2,4,7,9 NC No internal connection ( open or connected to GND )
4/11 ASB Inc. sales@asb.co.kr June 2015 AGN1440 3. Application: 13.75 ~ 14.50 GHz
3.1 Application Circuit
3.2 Biasing Procedure
Make sure no RF power is applied to the device before continuing. Pinch off device by setting VGG to -3.5 V. Raise VDD to +28 V while monitoring drain current. Raise VGG until drain current reaches 350 mA. VGG should be between -3.5 and -2.5 V. Apply RF power. To improve the thermal and RF performance, ASB recommends a heat sink er attached to the bottom of the package with an Indium alloy preform. Note 1: The capacitors are recommended on the bias supply line, close to the package, in order to prevent video oscillations which could damage the module.
5/11 ASB Inc. sales@asb.co.kr June 2015 AGN1440
3.3 Plots of Performances
12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) -30 -25 -20 -15 -10 Input / Output Return Loss (dB) Input Return Loss Output Return Loss 12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) Small Signal Gain (dB) S-parameter Input / Output Return Loss vs. Frequency VDD = +28 V, IDD = 350 mA, Pin = -20 dBm Small Signal Gain vs. Frequency VDD = +28 V, IDD = 350 mA, Pin = -20 dBm
6/11 ASB Inc. sales@asb.co.kr June 2015 AGN1440 18 20 22 24 26 28 30 32 34 36 38 40 Output Power / Tone (dBm) TOI (dBm) 13 13.5 14 14.5 15 Frequency (GHz) Output Power (dBm) Pin = +30 dBm Pin = +20 dBm Pin = +10 dBm Pin = +0 dBm -10 -5 0 5 10 15 20 25 30 35 Input Power (dBm) Output Power (dBm) 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 IDD (mA) 13 13.5 14 14.5 15 Frequency (GHz) Power Added Efficiency (%) Pin = +30 dBm Pin = +20 dBm Pin = +10 dBm Pin = +0 dBm Output Power vs. Frequency VDD = +28 V, IDD = 350 mA Power Added Efficiency vs. Frequency VDD = +28 V, IDD = 350 mA Output Power, IDD vs. Input Power VDD = +28 V, IDD = 350 mA Output TOI vs. Output Power / Tone VDD = +28 V, IDD = 350 mA, Δf = 10 MHz
7/11 ASB Inc. sales@asb.co.kr June 2015 AGN1440 -10 -5 0 5 10 15 20 25 30 35 Input Power (dBm) Output Power (dBm) 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 IDD (mA) -10 -5 0 5 10 15 20 25 30 35 Input Power (dBm) Output Power (dBm) 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 IDD (mA) -10 -5 0 5 10 15 20 25 30 35 Input Power (dBm) Output Power (dBm) 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 IDD (mA) -10 -5 0 5 10 15 20 25 30 35 Input Power (dBm) Output Power (dBm) 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 IDD (mA) VDD = +28 V, IDD = 350 mA @ 13.75 GHz VDD = +28 V, IDD = 350 mA @ 14.00 GHz VDD = +28 V, IDD = 350 mA @ 14.25 GHz VDD = +28 V, IDD = 350 mA @ 14.50 GHz Output Power, Drain Current vs. Input Power by Temperature
8/11 ASB Inc. sales@asb.co.kr June 2015 AGN1440 18 20 22 24 26 28 30 32 34 36 38 40 Output Power / Tone (dBm) TOI (dBm) 18 20 22 24 26 28 30 32 34 36 38 40 Output Power / Tone (dBm) TOI (dBm) 18 20 22 24 26 28 30 32 34 36 38 40 Output Power / Tone (dBm) TOI (dBm) 18 20 22 24 26 28 30 32 34 36 38 40 Output Power / Tone (dBm) TOI (dBm) VDD = +28 V, IDD = 350 mA Δf = 10 MHz @ 14.00 GHz VDD = +28 V, IDD = 350 mA, Δf = 10 MHz @ 14.25 GHz VDD = +28 V, IDD = 350 mA, Δf = 10 MHz @ 14.50 GHz Output TOI vs. Output Power / Tone by Temperature VDD = +28 V, IDD = 350 mA Δf = 10 MHz @ 13.75 GHz
9/11 ASB Inc. sales@asb.co.kr June 2015 AGN1440 -60 -40 -20 0 20 40 60 80 100 Temperature TOI (dBm) Output TOI vs. Temperature VDD = +28 V, IDD = 350 mA, Δf = 10 MHz, Output Power / Tone = +32 dBm 13 13.5 14 14.5 15 Frequency (GHz) Output Power (dBm) Output Power vs. Frequency VDD = +28 V, IDD = 350 mA, Pin = +30 dBm, CW
- Mounting Instructions for Flange Package
4.1 Screw Mounting
4.1.1 The flange of package should be attached using screws. Torque conditions are shown in table 1. Table 1. Recommended and Maximum Torque for Screw Mounting
4.1.2 First, tighten the screws with a torque driver set to 5 N-cm
thermal resistance between the package and heat sinker. 4.2.2 After soldering, the flux residue should be removed by appropriate cleaning methods.
4.2.3 The recommended soldering conditions are as follows:
11/11 ASB Inc. sales@asb.co.kr June 2015 AGN1440 5. Package Outline ＊Please note the 1.51 mm of the height of the lead from the bottom of the metal base when it is to be mounted. (End of Datasheet) Units: mm [in]