AG503-89 WJCI | Alldatasheet

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Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 1 of 5 June 2006 AG503-89 InGaP HBT Gain Block Product Information The Communications Edge TM Product Features x DC – 4000 MHz x +15.5 dBm P1dB at 900 MHz x +29 dBm OIP3 at 900 MHz x 21.5 dB Gain at 900 MHz x Single Voltage Supply x Lead-free / RoHS-compliant / Green SOT-89package x Internally matched to 50 :

Applications

x Mobile Infrastructure x CATV / FTTX x W-LAN / ISM x RFID x WiMAX / WiBro Product Description The AG503-89 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG503-89 typically provides 21.5 dB of gain, +29 dBm OIP3, and +15.5 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 1000 years at mounting temperatures of +85 qC and is housed in a lead-free/green/RoHS-compliant SOT-89 industry-standard SMT package. The AG503-89 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG503-89 will work for other various applications within the DC to 4 GHz frequency range such as CATV and WiMAX. Functional Diagram RF IN GND RF OUT GND 1 2 3 Function Pin No. Input 1 Output/Bias 3 Ground 2, 4 Specifications (1) Parameter Units Min Typ Max Operational Bandwidth MHz DC 4000 Test Frequency MHz 900 Gain dB 21.3 Input Return Loss dB 15 Output Return Loss dB 17 Output P1dB dBm +15.6 Output IP3 (2) dBm +29 Output IP2 dBm +37 Noise Figure dB 3.1 Test Frequency MHz 1900 Gain dB 18.1 19.1 20.1 Output P1dB dBm +14.4 Output IP3 (2) dBm +27.4 Device Voltage V 5.0 Device Current mA 45 1. Test conditions: 25 ºC, Supply Voltage = +6 V, Rbias = 22.1 , 50 System. 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Operating Case Temperature -40 to +85 qC Storage Temperature -55 to +150 qC DC Voltage +5.8 V RF Input Power (continuous) +10 dBm Junction Temperature +250 qC Operation of this device above any of these parameters may cause permanent damage. Typical Performance (1) Parameter Units Typical Frequency MHz 500 900 1900 2140 S21 dB 22.0 21.3 19.1 18.7 S11 dB -18 -15 -15 -17 S22 dB -24 -17 -10.6 -10.4 Output P1dB dBm +15.6 +15.6 +14.4 +14.2 Output IP3 (2) dBm +29.4 +29.0 +27.4 +27.2 Noise Figure dB 3.0 3.1 3.3 3.3

Ordering Information

Part No. Description AG503-89G InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 Package) AG503-89PCB 700 – 2400 MHz Fully Assembled Eval. Board

Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 2 of 5 June 2006 AG503-89 InGaP HBT Gain Block Product Information The Communications Edge TM Typical Device RF Performance Supply Bias = +6 V, Rbias = 22.1 :, Icc = 45 mA Frequency MHz 100 500 900 1900 2140 2400 3500 5800 S11 dB -26 -18 -15 -15 -17 -22 -27 -16 1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, Device Voltage = 6.0 V, Rbias = 22.1 , Icc = 45 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency 0 1 2 3 4 Frequency (GHz) Gain (dB) -40 C +25 C +85 C Return Loss -40 -30 -20 -10 0 1 2 3 4 5 6 Frequency (GHz) S11, S22 (dB) S11 S22 I-V Curve Device Voltage (V) Device Current (mA) Optimal operating point Output IP3 vs. Frequency 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) OIP3 (dBm) -40 C +25 C +85 C Output IP2 vs. Frequency 0 200 400 600 800 1000 Frequency (MHz) OIP2 (dBm) -40 C +25 C +85 C Noise Figure vs. Frequency 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) NF (dB) -40 C +25 C +85 C P1dB vs. Frequency 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) P1dB (dBm) -40 C +25 C +85 C Output Power / Gain vs. Input Power frequency = 900 MHz -12 -8 -4 0 4 8 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain Output Power / Gain vs. Input Power frequency = 2000 MHz -12 -8 -4 0 4 8 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain

Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 3 of 5 June 2006 AG503-89 InGaP HBT Gain Block Product Information The Communications Edge TM Typical Device RF Performance Supply Bias = +8 V, Rbias = 44 :, Icc = 45 mA Gain vs. Frequency 0 1 2 3 4 Frequency (GHz) Gain (dB) -40 C +25 C +85 C Output IP3 vs. Frequency 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) OIP3 (dBm) -40 C +25 C 85 C Output IP2 vs. Frequency 0 200 400 600 800 1000 Frequency (MHz) OIP2 (dBm) +25 C +85 C -40 C P1dB vs. Frequency 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) P1dB (dBm) -40 C +25 C +85 C Noise Figure vs. Frequency 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) NF (dB) -40 C +25 C +85 C

Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 4 of 5 June 2006 AG503-89 InGaP HBT Gain Block Product Information The Communications Edge TM Application Circuit Recommended Component Values Reference Frequency (MHz) Designator 50 500 900 1900 2200 2500 3500 L1 820 nH 220 nH 68 nH 27 nH 22 nH 18 nH 15 nH C1, C2, C4 .018 µF 1000 pF 100 pF 68 pF 68 pF 56 pF 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. Value / Type Size L1 39 nH wirewound inductor 0603 C1, C2 56 pF chip capacitor 0603 C3 0.018 PF chip capacitor 0603 C4 Do Not Place R1 22.1 : 1% tolerance 0805 Recommended Bias Resistor Values Supply Voltage R1 value Size 6 V 22.2 ohms 0603 7 V 44.4 ohms 0805

8 V 67 ohms 1206

9 V 89 ohms 1210

10 V 111 ohms 1210

12 V 156 ohms 2010

The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +6 V. A 1% tolerance resistor is recommended. Typical Device Data S-Parameters (Vdevice = +5.0 V, ICC = 45 mA, T = 25 C, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) Device S-parameters are available for download off of the website at: http://www.wj.com Blocking Capacitor RF OUT RF Choke 0.018 µF Bias Resistor RF IN Bypass Capacitor Blocking Capacitor Vcc Icc = 45 mA AG503-89

Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com Page 5 of 5 June 2006 AG503-89 InGaP HBT Gain Block Product Information The Communications Edge TM AG503-89G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 qC reflow temperature) and leaded (maximum 245 qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Land Pattern Thermal Specifications Parameter Rating Operating Case Temperature -40 to +85 qC Thermal Resistance, Rth (1) 232 qC / W Junction Temperature, Tj (2) 137 qC 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5V, 45 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 Product Marking The AG503-89G will be marked with an “ A503G” designator with an alphanumeric lot code marked below the part designator. The obsolete tin-lead package is marked with an “ AG503” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “ Application Notes” section. MSL / ESD Rating ESD Rating: Class 1C Value: Passes 1000V min. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: Passes 1000V min. Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135º ) diameter drill and have a final plated thru diameter of .25 mm (.010º ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. MTTF vs. GND Tab Temperature 100 1000 60 70 80 90 100 110 120 Tab Temperature (°C) MTTF (million hrs)