AG402-89-RFID WJCI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 6 June 2005 AG402-89 InGaP HBT Gain Block Product Information Product Features
- DC – 6000 MHz
- +17 dBm P1dB at 900 MHz
- +31.5 dBm OIP3 at 900 MHz
- 15 dB Gain at 900 MHz
- Single Voltage Supply
- Internally matched to 50 Ω
- Lead-free/Green/RoHS- compliant SOT-89 Package
- MTTF > 1000 years
Applications
- Mobile Infrastructure
- CATV / DBS
- W-LAN / ISM
- RFID
- Defense / Homeland Security
- Fixed Wireless Product Description The AG402-89 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-m ount package. At 900 MHz, the AG402-89 typically provides 15 dB of gain, +31.5 dBm Output IP3, and +17 dBm P1dB. The device combines dependable performance with superb quality to maintain MTTF values exceeding 1000 years at mounting temperatures of +85 °C and is available in the environmentally-friendly lead-free/green/RoHS-compliant SOT-89 package. The AG402-89 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT technology process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG402-89 will work for other various applications within the DC to 6 GHz frequency range such as CATV and fixed wireless. Functional Diagram RF IN GND RF OUT GND 1 23 Function Pin No. Input 1 Output/Bias 3 Ground 2, 4 Specifications (1) Parameter Units Min Typ Max Operational Bandwidth MHz DC 6000 Test Frequency MHz 900 Gain dB 15.3 Input Return Loss dB 12 Output Return Loss dB 19 Output IP3 (2) dBm +31.7 Output IP2 dBm +45 Output P1dB dBm +17.1 Noise Figure dB 3.8 Test Frequency MHz 1900 Gain dB 13.5 14.5 15.5 Output IP3 (2) dBm +28.7 Output P1dB dBm +16.0 Device Voltage V 4.91 Device Current mA 60 1. Test conditions: 25º C, Supply Voltage = +6 V, Rbias = 18.2 Ω, 50 Ω System. 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Operating Case Temperature -40 to +85 °C Storage Temperature -55 to +150 °C DC Voltage +6.2 V RF Input Power (continuous) +10 dBm Junction Temperature +250° C Operation of this device above any of these parameters may cause permanent damage. Typical Performance (1) Parameter Units Typical Frequency MHz 500 900 1900 2140 S21 dB 15.6 15.3 14.5 14.4 S11 dB -14 -12 -11 -13 S22 dB -33 -19 -13 -13 Output P1dB dBm +17.2 +17.1 +16.0 +15.2 Output IP3 (2) dBm +32.9 +31.7 +28.7 +27.9 Noise Figure dB 3.7 3.8 4.0 4.0
Ordering Information
Part No. Description AG402-89* InGaP HBT Gain Block (lead-tin SOT-89 Pkg) AG402-89G InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 Pkg) AG402-89PCB 700 – 2400 MHz Fully Assembled Eval. Board * This package is being phased out in favor of the green package type which is backwards compatible for existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 6 June 2005 AG402-89 InGaP HBT Gain Block Product Information Typical Device RF Performance Supply Bias = 6 V, Rbias = 18.2 ΩΩΩΩ, Icc = 60 mA Frequency MHz 100 500 900 1900 2140 2400 3500 5800 S11 dB -18 -14 -12 -11 -13 -15 -23 -14 S22 dB -23 -33 -19 -13 -13 -13 -18 -9 1. Test conditions: T = 25º C, Supply Voltage = +6 V, Device Voltage = 4.91 V, Rbias = 18.2 Ω, Icc = 60 mA typical, 50 Ω System. 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency 01234 Frequency (GHz) Gain (dB) -40 C +25 C +85 C Return Loss -40 -30 -20 -10 0123456 Frequency (GHz) S11, S22 (dB) S11 S22 I-V Curve 100 Device Voltage (V) Device Current (mA) Optimal operating point Output IP3 vs. Frequency 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) OIP3 (dBm) -40 C +25 C +85 C Output IP2 vs. Frequency 0 200 400 600 800 1000 Frequency (MHz) OIP2 (dBm) -40c +25c +85c Noise Figure vs. Frequency 00 . 511 . 522 . 53 Frequency (GHz) NF (dB) -40 C +25 C +85 C P1dB vs. Frequency 00 . 511 . 522 . 533 . 54 Frequency (GHz) P1dB (dBm) -40 C +25 C +85 C Output Power / Gain vs. Input Power frequency = 900 MHz - 1 2 - 8 - 4 048 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain Output Power / Gain vs. Input Power frequency = 2000 MHz - 1 2 - 8 - 4 048 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain
Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 6 June 2005 AG402-89 InGaP HBT Gain Block Product Information Typical Device RF Performance (cont’d) Supply Bias = +8 V, Rbias = 51 ΩΩΩΩ, Icc = 60 mA Gain vs. Frequency 01234 Frequency (GHz) Gain (dB) -40 C +25 C +85 C Output IP3 vs. Frequency 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) OIP3 (dBm) -40 C +25 C +85 C Output IP2 vs. Frequency 0 200 400 600 800 1000 Frequency (MHz) OIP2 (dBm) -40c +25c +85c P1dB vs. Frequency 00 . 511 . 522 . 533 . 54 Frequency (GHz) P1dB (dBm) -40 C +25 C +85 C Noise Figure vs. Frequency 00 . 511 . 522 . 53 Frequency (GHz) NF (dB) -40 C +25 C +85 C Application Circuit Recommended Component Values Reference Frequency (MHz) Designator 50 500 900 1900 2200 2500 3500 L1 820 nH 220 nH 68 nH 27 nH 22 nH 18 nH 15 nH C1, C2, C4 .018 µF 1000 pF 100 pF 68 pF 68 pF 56 pF 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. Value / Type Size L1 39 nH wirewound inductor 0603 C1, C2 56 pF chip capacitor 0603 C3 0.018 µF chip capacitor 0603 C4 Do Not Place R1 18.2 Ω 1% tolerance 0805 Recommended Bias Resistor Values Sup p ly Voltage R 1 v alue Size 6 V 18.2 ohms 0805 7 V 34.8 ohms 1206
8 V 52 ohms 1210
9 V 68 ohms 1210
10 V 85 ohms 2010
12 V 118 ohms 2010
The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +6 V. A 1% tolerance resistor is recommended. Blocking Capacitor RF OUT RF Choke 0.018 µF Bias Resistor RF IN Bypass Capacitor Blocking Capacitor Vcc Icc = 60 mA AG402-89
Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 6 June 2005 AG402-89 InGaP HBT Gain Block Product Information AG402-89 (SOT-89 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Outline Drawing Land Pattern Thermal Specifications Parameter Rating Operating Case Temperature -40 to +85 °C Thermal Resistance, Rth (1) 191 ° C/W Junction Temperature, Tjc (2) 141 ° C 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +4.91V, 60 mA at an 85 °C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 °C. Product Marking The AG402-89 will be marked with an “AG402” designator. An alphanumeric lot code (“XXXX-X”) is also marked below the part designator on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating ESD Rating: Class 1C Value: Passes at 1000 V min. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: Passes at 1000 V min. Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +235° C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. MTTF vs. GND Tab Temperature 100 1000 60 70 80 90 100 110 Tab Temperature (°C) MTTF (million hrs)
Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 5 of 6 June 2005 AG402-89 InGaP HBT Gain Block Product Information AG402-89G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260°C reflow temperature) and leaded (maximum 245°C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Land Pattern Thermal Specifications Parameter Rating Operating Case Temperature -40 to +85 °C Thermal Resistance, Rth (1) 191 ° C/W Junction Temperature, Tjc (2) 141 ° C 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +4.91V, 60 mA at an 85 °C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 °C. Product Marking The AG402-89G will be marked with an “A402G” designator. An alphanumeric lot code (“XXXX-X”) is also marked below the part designator on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating ESD Rating: Class 1C Value: Passes at 1000 V min. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: Passes at 1000 V min. Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260° C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. MTTF vs. GND Tab Temperature 100 1000 60 70 80 90 100 110 Tab Temperature (°C) MTTF (million hrs)
Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 6 of 6 June 2005 AG402-89 InGaP HBT Gain Block Product Information Typical Device Data S-Parameters (Vdevice = +4.91 V, ICC = 60 mA, T = 25° C, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) Device S-parameters are available for download off of the website at: http://www.wj.com