AG402-86

AG402-86_15 TRIQUINT | Alldatasheet

Document overview

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Technical content

Specifications and information are subject to change without notice AG402-86 InGaP HBT Gain Block Product Features DC – 6000 MHz

• 15 dB Gain @ 900 MHz
• +17 dBm P1dB @ 900 MHz
• +32.5 dBm OIP3 @ 900 MHz
• Single Voltage Supply
• Internally matched to 50 Ω
• Robust 1000V ESD, Class 1C
• Lead-free/green/RoHS-compliant SOT-363 package

Applications

• CATV / FTTX
• WLAN / ISM
• RFID
• WiMAX / WiBro Product Description The AG402-86 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mou nt package. At 900 MHz, the AG402-86 typically provid es 15 dB gain, +32.5 dBm OIP3, and +17 dBm P1dB. The device combines dependable performance with consist ent quality to maintain MTTF values exceeding 1000 year s at mounting temperatures of +85 °C and is housed in a lead- free/green/RoHS-compliant SOT-86 (micro-X) industry - standard SMT package. The AG402-86 consists of a Darlington-pair amplifie r using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors , a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applie d to various current and next generation wireless techno logies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG402-86 will work for other various applicatio ns within the DC to 6 GHz frequency range such as CATV and WiMAX. Functional Diagram Function Pin No. Input 1 Output/Bias 3 Ground 2, 4 Specifications (1) Parameter Units Min Typ Max Operational Bandwidth MHz DC 6000 Test Frequency MHz 900 Gain dB 15.0 Input Return Loss dB 18 Output Return Loss dB 25 Output P1dB dBm +17.1 Output IP3 (2) dBm +32.6 Output IP2 dBm +46 Noise Figure dB 3.7 Test Frequency MHz 1900 Gain dB 13.3 14.3 15.3 Output P1dB dBm +15.9 Output IP3 (2) dBm +29.6 Device Voltage V 4.91 Device Current mA 60 1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, R bias = 18.2 Ω , 50 Ω System. 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Storage Temperature -55 to +125 °C DC Voltage +5 V RF Input Power (continuous) +10 dBm Thermal Resistance, Rth 216 °C/W Junction Temperature +177 °C Operation of this device above any of these parameters may cause permanent damage. Typical Performance (1) Parameter Units Typical Frequency MHz 500 900 1900 2140 S21 dB 15.2 15.0 14.3 14.0 S11 dB -16 -18 -20 -20 S22 dB -28 -25 -16 -16 Output P1dB dBm +17.1 +17.1 +15.9 +15.3 Output IP3 dBm +33.3 +32.6 +29.6 +28.2 Noise Figure dB 3.7 3.7 3.9 3.9

Ordering Information

Part No. Description AG402-86G InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-86 Package) AG402-86PCB 700 – 2400 MHz Fully Assembled Eval. Board Standard tape / reel size = 3000 pieces on a 13” reel RF Out RF In GND GND

Specifications and information are subject to change without notice AG402-86 InGaP HBT Gain Block Typical Device RF Performance Supply Bias = 6 V, R bias = 18.2 ΩΩ ΩΩ , I cc = 60 mA Frequency MHz 100 500 900 1900 2140 2400 3500 5800 S11 dB -18 -16 -18 -20 -20 -20 -20 -16 S22 dB -23 -28 -25 -16 -16 -16 -17 -13 1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, Device Voltage = 4.91 V, Rbias = 18.2 Ω , Icc = 60 mA typical, 50 Ω System. 2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency 0 1 2 3 4 Frequency (GHz) Gain (dB) -40 C +25 C +85 C R eturn Lo ss -40 -30 -20 -10 0 1 2 3 4 5 6 F req uency (G H z) S11, S22 (dB) S 11 S 22 I-V C urve 100 D evice V o ltag e (V ) Device Current (mA) O ptim al operating point O utp ut IP 3 vs. F req u enc y 0 0.5 1 1.5 2 2.5 3 Frequ ency (G H z) OIP3 (dBm) -40 C +25 C +85 C O utp ut IP 2 vs. F req u enc y 0 200 400 600 800 1000 F requ en cy (M H z) OIP2 (dBm) -40c +25c +85 c N oise Figu re vs. F req u enc y 0 0.5 1 1.5 2 2.5 3 F req uen cy (G H z) NF (dB) -40 C +2 5 C +85 C P 1d B v s. F req uen cy 0 0.5 1 1.5 2 2.5 3 3.5 4 F req u en cy (G H z) P1dB (dBm) -40 C +2 5 C +85 C Output Power / Gain vs. Input Power frequency = 900 MHz -12 -8 -4 0 4 8 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain Output Power / Gain vs. Input Power frequency = 2000 MHz -12 -8 -4 0 4 8 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain

Specifications and information are subject to change without notice AG402-86 InGaP HBT Gain Block Typical Device RF Performance (cont’d) Supply Bias = +8 V, R bias = 51 ΩΩ ΩΩ , I cc = 60 mA Gain vs. Frequency 0 1 2 3 4 Frequency (GHz) Gain (dB) -40 C +25 C +85 C O utp ut IP 3 vs. F req u enc y 0 0.5 1 1.5 2 2.5 3 Frequ ency (G H z) OIP3 (dBm) -40 C +25 C +85 C O utp ut IP 2 vs. F req u enc y 0 200 400 600 800 1000 Frequ ency (M H z) OIP2 (dBm) -40c +25 c +85c P 1d B v s. F req uen cy 0 0.5 1 1.5 2 2.5 3 3.5 4 F req u en cy (G H z) P1dB (dBm) -40 C +2 5 C +85 C N oise Figu re vs. F req u enc y 0 0.5 1 1.5 2 2.5 3 F req uen cy (G H z) NF (dB) -40 C +2 5 C +85 C

Specifications and information are subject to change without notice AG402-86 InGaP HBT Gain Block Application Circuit Recommended Component Values Reference Frequency (MHz) Designator 50 500 900 1900 2200 2500 3500 L1 820 nH 220 nH 68 nH 27 nH 22 nH 18 nH 15 nH C1, C2, C4 .018 µF 1000 pF 100 pF 68 pF 68 pF 56 pF 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Ref. Desig. Value / Type Size L1 39 nH wirewound inductor 0603 C1, C2 56 pF chip capacitor 0603 C3 0.018 µ F chip capacitor 0603 C4 Do Not Place R1 18.2 Ω 1% tolerance 0805 Recommended Bias Resistor Values Supply Voltage R1 value Size 6 V 18.2 ohms 0805 7 V 34.8 ohms 1206

8 V 52 ohms 1210

9 V 68 ohms 1210

10 V 85 ohms 2010

12 V 118 ohms 2010

The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +6 V. A 1% tolerance resistor is recommended. Typical Device Data S-Parameters (V device = +4.91 V, I CC = 60 mA, T = 25 °C, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) Device S-parameters are available for download from the website at: http://www.wj.com Blocking Capacitor RF OUT RF Choke 0.018 µF Bias Resistor RF IN Bypass Capacitor Blocking Capacitor Vcc Icc = 60 mA AG402-86

Specifications and information are subject to change without notice AG402-86 InGaP HBT Gain Block AG402-86G (Green / Lead-free Sot-86 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper. Outline Drawing Land Pattern Product Marking The component will be marked with a “Y” designator followed by a two-digit numeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an “F” designator followed by a two-digit numeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating ESD Rating: Class 1C Value: Passes ≥ 1000V min. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: Passes ≥ 1000V min. Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.