ACR3001

ACR3001 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 V BVCER IC = 5.0 mA R BE = 10 Ω 45 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 28 V 0.5 mA hFE VCE = 5.0 V IC = 100 mA 30 300 --- COB VCB = 28 V f = 1.0 MHz 3.5 pF PG ηηηηC VCC = 28 V P OUT = 1.0 W f = 3.0 GHz 7.0 dB NPN SILICON RF POWER TRANSISTOR ACR3001 DESCRIPTION: The ACR3001 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES:

• PG = 7 dB min. at 1.0 W / 3,000 MHz
• Hermetic Microstrip Package
• Omnigold™ Metalization System MAXIMUM RATINGS IC 200 mA VCC 30 V PDISS 6.0 W @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +200 O C θθθθJC 25 O C/W PACKAGE STYLE .250 2L FLG MINIMUM inches / mm .740 / 18.80 .128 / 3.25 .245 / 6.22 .028 / 0.71 .110 / 2.79 B C D E F G A MAXIMUM .255 / 6.48 .032 / 0.81 .117 / 2.97 .132 / 3.35 inches / mm .117 / 2.97 H .560 / 14.22 .570 / 14.48 DIM K L I J .790 / 20.07 .225 / 5.72 .003 / 0.08 .810 / 20.57 .235 / 5.97 .007 / 0.18 L G I J K H F B E C ØD A NM P .060 x 45° CHAMFER P N M .149 / 3.78 .058 / 1.47 .187 / 4.75 .068 / 1.73 .125 / 3.18