2SA968 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B
DESCRIPTION
- With TO-220 package
- Complement to type 2SC2238
- High breakdown votage
APPLICATIONS
- Power amplifier applications
- Driver stage amplifier applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SA968 -160 2SA968A -180 VCBO Collector-base voltage 2SA968B Open emitter -200 V 2SA968 -160 2SA968A -180 VCEO Collector-emitter voltage 2SA968B Open base -200 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A IE Emitter current 1.5 A PT Total power dissipation T C=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SA968 -160 2SA968A -180 V(BR)CEO Collector-emitter breakdown voltage 2SA968B IC=-10mA; IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-0.5A; IB=-50mA -1.5 V VBE Base-emitter on voltage I C=-500mA ; VCE=-5V -1.0 V ICBO Collector cut-off current V CB=-160V ;IE=0 -1.0 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -1.0 µA hFE DC current gain I C=-100mA ; VCE=-5V 70 240 Cob Output capacitance I E=0 ; VCB=-10V,f=1MHz 30 pF fT Transition frequency I C=-100mA ; VCE=10V 100 MHz hFE Classifications O Y 70-140 120-240
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)