DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
TRANSISTOR (PNP)
FEATURES
MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -400 V V CEO Collector-Emitter Voltage -400 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -0.2 A P C Collector Power Dissipation 0.5 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in Typ Max Unit Collector-base breakdown voltage V (BR) CBO I C = -100μA, I E =0 -400 V Collector-emitter breakdown voltage V (BR) CEO I C = -1mA,I B =0 -400 V Emitter-base breakdown voltage V (BR) EBO I E =-100μA,I C =0 -5 V Collector cut-off current I CBO V CB =-400V, I E =0 -0.1 μA Collector cut-off current I CEO V CE =-400V, I B =0 -5 μA Emitter cut-off current I EBO V EB = -4V, I C =0 -0.1 μA h FE(1) V CE =-10V, I C =-10mA 80 300 h FE(2) V CE =-10V, I C =-1mA 70 h FE(3) V CE =-10V, I C =-100mA 60 DC current gain h FE(4) V CE =-10V, I C =-50mA 80 V CE (sat) I C =-10mA, I B =-1mA -0.2 V Collector-emitter saturation voltage V CE (sat) I C =-50mA, I B =-5mA -0.3 V Base-emitter saturation voltage V BE (sat) I C =-10mA, I B = -1mA -0.75 V Transition frequency f T V CE =-20V, I C =-10mA f =30MHz
50 MHz
- BASE 2. COLLECTOR 3. EMITTER A94 Date:2011/05 www.htsemi.comsemiconductor JinYu
-10 -12 -14 0 25 50 75 100 125 150 100 200 300 400 500 600 -10 -100 100 -1 -10 -100 -1000 -1 -10 -100 100 -0.1 -1 -10 100 -1 -10 -100 -200 -400 -600 -800 -1000 -10 -100 COMMON EMITTER T a =25 -100uA -90uA -80uA -70uA -60uA -50uA -40uA -30uA -20uA I B =-10uA COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P C (mW) P C —— T a -30 COMMON EMITTER V CE = -20V T a =25 COLLECTOR CURRENT I C (mA) TRANSITION FREQUENCY f T (MHz) -200 f T β=10 I C V BEsat T a =25 T a =100 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) -100 500 -200 I C I C COMMON EMITTER V CE = -10V T a =100 T a =25 COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE -30 -0.3 -0.03 -30-3 -30-3 -300 -30-3 300 -3-0.3 f=1MHz I E =0/I C T a =25 V CB EB C ob ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) C ib C ob 300 -20 -200 -10 -0.1 -0.01 A94Typical Characteristics h FE β=10 I C V CEsat T a =100 T a =25 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COMMON EMITTER V CE =-10V COLLECTOR CURRENT I C (mA) T a =25 T a =100 BASE-EMMITER VOLTAGE V BE (mV) -200 I C —— V BE Date:2011/05 www.htsemi.comsemiconductor JinYu