A92 HTSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
- BASE 2. COLLECTOR 3. EMITTER
FEATURES
z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage MARKING: A92 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100µA,I E =0 -310 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA,I B =0 -305 V Emitter-base breakdown voltage V (BR)EBO I E =-100µA,I C =0 -5 V I CBO V CB =-200V,I E =0 -0.25 µA V CE =-200V,I B =0 -0.25 µA Collector cut-off current I CEO V CE =-300V,I B =0 -5 µA Emitter cut-off current I EBO V EB =-5V,I C =0 -0.1 µA h FE(1) V CE =-10V, I C =-1mA 60 h FE(2) V CE =-10V, I C =-10mA 100 300 DC current gain h FE(3) V CE =-10V, I C =-80mA 60 Collector-emitter saturation voltage V CE(sat) I C =-20mA,I B =-2mA -0.2 V Base-emitter saturation voltage V BE(sat) I C =-20mA,I B =-2mA -0.9 V Transition frequency f T V CE =-20V,I C =-10mA,f=30MHz 50 MHz Symbol Parameter Value Unit V CBO Collector-Base Voltage -310 V V CEO Collector-Emitter Voltage -305 V V EBO Emitter-Base Voltage -5 V I C Collector Current -500 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ A92 TRANSISTOR (PNP) Date:2011/05 www.htsemi.comsemiconductor JinYu