A92 HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Collector-Emitter voltage:VCEO=300V Collector current up to 500mA. Complement to A42 Small flat package. Power dissipation:Pd(max)=500mW. Marking: A92 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-BaseV oltage V CBO -300 V Collector-EmitterV oltage V CEO -300 V Emitter-Base V oltage V EBO -5 V CollectorCurrent-Continuous IC -500 m A CollectorPower dissipation PC 0.5 W StorageTemp erature Tstg -55to +150 ELECTRICAL CHARACTERISTICS (@ Ta=25 unless otherwise specified) Parameter Symbol T est co n dit i ons M in M ax U nit Collector-basebreakdow n voltage V CBO Ic=-100µA, IE=0 -300 V Collector-emitter breakdow n voltage V CEO Ic=-1mA, IB =0 -300 V Emitter-base breakdow n voltage V EBO IE= -100µA, IC =0 -5 V Collector cut-off current ICBO V CB =-200V , IE=0 -0.25 µA Emittercut-offcurrent IEBO V EB = -5V , IC =0 -0.1 µA r rent gain H FE(1) V CE = -10V , IC = -1mA 60 H FE(2) V CE = -10V , IC =-10mA 100 300 H FE(3) V CE = -10V , IC =-30mA 60 Collector-emitter saturationvoltage V CE (sat) IC =-20 mA, IB = -2mA -0.2 V Base-emitter saturation voltage V BE (sat) IC = -20 mA, IB = -2mA -0.9 V Transition frequency fT V CE =-20V , IC = -10mA f=30MHz
50 MHz
A92 (PNP ) 1. BASE 2.COLLECTO SOT -89 3.EMITTER
Page:P2-P2 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. A92 Typical Characteristics