A733LT1 JIANGSU | Alldatasheet

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Technical content

  1. 9 0. 95 0. 95 2. 9 0. 4 1. 3 2. 4 1. 0 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A733LT1 TRANSISTOR（ PNP ）

FEATURES

PCM : 0.2 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -5 μ A ， IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE= -50 μ A， IC=0 V Collector cut-off current ICBO VCB= -60 V , IE=0 -0.1 μ A Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 μ A DC current gain HFE（1） VCE= -6 V, IC= -1mA 120 475 Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB=- 10mA -0.18 -0.3 V Transition frequency f T VCE= -6 V, IC=-10mA f = 30MHz MHz CLASSIFICATION OF HFE(1) Rank L H Range 120-200 200-475 MARKING CS Unit : mm SOT—23 1. BASE 2. EMITTER 3. COLLECTOR

SOT-23 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L θ Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.300 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 2.000 0.500 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.071 0.012 Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100 0.079 0.020 Dimensions In Millimeters Dimensions In Inches 0.037TPY 0.022REF 0.950TPY 0.550REF D A E L b C 0.2 e θ