A733 HTSEMI | Alldatasheet
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z Collector-Base Voltage z Complement to C945 MAXIMUM RATINGS(T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -50 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -150 mA P C Collector Power Dissipation 200 mW T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) CBO I C = -5uA,I E =0 -60 V Collector-emitter breakdown voltage V(BR) CEO I C = -1mA , I B =0 -50 V Emitter-base breakdown voltage V(BR) EBO I E = -50uA, I C =0 -5 V Collector cut-off current I CBO V CB = -60 V , I E =0 -0.1 uA Emitter cut-off current I EBO V EB = -5 V , I C =0 -0.1 uA DC current gain h FE V CE = -6 V, I C = -1mA 120 475 Collector-emitter saturation voltage V CE (sat) I C = -100mA, I B Base-emitter voltage V BE(on) V CE =-6V,I C Transition frequency f T V CE =-6V,I C =-10mA 50 MHz Collector output capacitance C ob V CB =-10V,I E =0,f=1MH Z 4.5 7 pF Noise figure NF V CE =-6V,I C =-0.3mA, Rg=10kΩ,f=100H Z 6 20 dB CLASSIFICATION OF h FE Rank L H Range 120-220 220-475 MARKING CS SOT-23 1. BASE 2. EMITTER 3. COLLECTOR A733 Date:2011/05 www.htsemi.comsemiconductor JinYu TRANSISTOR (PNP)
Date:2011/05 www.htsemi.comsemiconductor JinYu