A733

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) FEATURE z Collector-Base Voltage z Complement to C945 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in Typ Max Unit Collector-base breakdown voltage V(BR) CBO I C = -5uA,I E =0 -60 V Collector-emitter breakdown voltage V(BR) CEO I C = -1mA , I B =0 -50 V Emitter-base breakdown voltage V(BR) EBO I E = -50uA, I C =0 -5 V Collector cut-off current I CBO V CB = -60 V , I E =0 -0.1 uA Emitter cut-off current I EBO V EB = -5 V , I C =0 -0.1 uA DC current gain h FE V CE = -6 V, I C = -1mA 120 475 Collector-emitter saturation voltage V CE (sat) I C = -100mA, I B Base-emitter voltage V BE(on) V CE =-6V,I C Transition frequency f T V CE =-6V,I C =-10mA 50 MHz Collector output capacitance C ob V CB =-10V,I E =0,f=1MH Z 4.5 7 pF Noise figure NF V CE =-6V,I C =-0.3mA, Rg=10kΩ,f=100H Z 6 20 dB CLASSIFICATION OF h FE Rank L H Range 120-220 220-475 MARKING CS SOT-23 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014www.cj-elec.com C,Oct,2014 JC(T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -150 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃

-0.1 -1 -10 -100 100 200 300 -1 -10 -100 -10 -100 -0.1 -1 -10 -1 -10 -100 200 0 25 50 75 100 125 150 100 150 200 250 -0.1 -10 -100 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -0 -2 -4 -6 -8 -10 -150 f T —— I C h FE COMMON EMITTER V CE =-6V -3 -30-0.3 T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C T a =25 -30 -300 -30-0.3 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) β=10 T a =100 I C V CEsat -500 -150 -3-0.3 -20 Cob Cib REVERSE VOLTAGE V (V) f=1MHz I E =0/I C T a =25 V CB / V EB C ob / C ib CAPACITANCE C (pF) 300 100 -3 -30 V CE =-6V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) T a COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) P C -150 V BE I C -30 -0.3 T a =25 T a =100 COMMON EMITTER V CE =-6V COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) -0.5 -30-0.2 β=10 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) T a =25 T a =100 -150 I C V BEsat Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) -20uA -18uA -16uA -14uA -12uA -10uA -8uA -6uA -4uA I B =-2uA COMMON EMITTER T a =25 www.cj-elec.com 2 A,Jun,2014www.cj-elec.com C,Oct,2014 Typical Characteristics

A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com C,Oct,2014

www.cj-elec.com 4 A,Jun,2014www.cj-elec.com C,Oct,2014