A733 HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Collector-Base Voltage Complement to C945 MARKING :CS MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO -60 V Collector-EmitterV oltage V CE O -50 V Emitter-Base V oltage V EBO -5 V Collector Current-Continuous IC 0.15 A Collector Pow er Dissipation PC 0.2 W Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions M in T yp M ax U nit Collector-base breakdow n voltage V CBO IC = -5uA,IE=0 -60 V Collector-emitter breakdow n voltage V CEO IC = -1mA , IB =0 -50 V Emitter-basebreakdow n voltage V EBO IE= -50uA, IC =0 -5 V Collector cut-off current ICBO V CB = -60 V , IE=0 -0.1 uA Emittercut-offcurrent IEBO V EB = -5 V , IC =0 -0.1 uA DC currentgain hFE V CE = -6 V ,IC = -1mA 120 475 Collector-emitter saturationvoltage V CE (sat) IC = -100mA, IB =-10mA -0.18 -0.3 V Base-emittervoltage V BE(on) V CE =-6V ,IC =-1.0mA -0.58 -0.62 -0.68 V Transition frequency fT V CE =-6V ,IC =-10mA 50 MHz Collector output capacitance C ob V CB =-10V ,IE=0,f=1MH Z 4.5 7 pF Noise figure NF V CE =-6V ,IC =-0.3mA, Rg=10kΩ,f=100H Z 6 20 dB CLASSIFICATIONOF hFE Rank L H Range 120-220 220-475 (PNP ) 1. BASE 2. EMITTER SOT -23 3. COLLECTO A733
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical Characteristics A733