A6A:50.01 AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A6A:50.XX O O O O O O O O O O O O This datasheet applies to: A6A:50.XX, A6B:50.XX For long lead, add “L” to the end of part number VOLTAGE RATINGS VRSM , VR (V) Max. non- rep. peak reverse voltage TJ = 0 to 150 C TJ = -40 to 0 C TJ = 25 to 150 C A6A:50.01 100 100 200 A6A:50.02 200 200 300 A6A:50.04 400 400 500 A6A:50.06 600 600 700 A6A:50.08 800 800 900 VRRM , VR (V) Max. rep. peak reverse voltage Part Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 150 C -40 to 150 C Max. Av. current 50 A @ Max. TC 150 C 78 A 634 50 Hz half cycle sine wave 691 60 Hz half cycle sine wave 700 50 Hz half cycle sine wave 830 60 Hz half cycle sine wave 1606 t = 10ms 1751 t = 8.3 ms 2900 t = 10ms 2490 t = 8.3 ms

20 A2s1/2

Initial TJ = 150 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability IF(RMS) Nom. RMS current - I2t Max. I2t capability A2s Initial TJ = 150 C, rated VRRM applied after surge. Initial TJ = 150 C, no voltage applied after surge. A Initial TJ = 150 C, no voltage applied after surge. NOTES Initial TJ = 150 C, rated VRRM applied after surge. 180 half sine wave IFSM Max. Peak non-rep. surge current IF(AV) PARAMETER TJ Junction Temperature Tstg Storage Temperature

O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics SEMICONDUTORES LTDA. AEGIS A6A:50.XX CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- --- 1.30 V VF(TO)1 Low-level threshold --- --- 0.71 VF(TO)2 High-level threshold --- --- 0.93 rF1 Low-level resistance --- --- 7.20 rF2 High-level resistance --- --- 3.60 IRM Peak reverse current --- --- 6.00 mA RthJC Thermal resistance, junction-to-case --- --- 0.85 C/W RthCS Thermal resistance, case-to-sink --- --- 0.55 C/W wt Weight --- 10(0.36) --- g(oz.) Case Style Press-fit --- TEST CONDITIONS Mtg. Surface smooth, flat and greased. Single side. --- --- TJ = 180 C Av. power = VF(TO) * IF(AV) +rF * [IF(RMS)]2V mW DC operation Initial TJ = 25 C, sinusoidal wave, Ipeak = 157A. Use low values for IFM < pIF(AV) TJ = 180 C. Max. Rated VRRM 0 10 20 30 40 50 100 105 110 115 120 125 130 135 140 145 150 180º 120º 90º 60º 30º Maximum Allowable Case Temperature *Sinusoidal waveform Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 100 110 120 130 140 150 DC180º 120º 90º 60º 30º Maximum Allowable Case Temperature *Rectangular waveform Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

Fig. 3 - Average Forward Power Loss Characteristics Fig. 4 - Average Forward Power Loss Characteristics Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance ZthJC Characteristics SEMICONDUTORES LTDA. AEGIS A6A:50.XX 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 100 200 300 400 500 600 700 800 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 10 20 30 40 50 60 70 80 100 150 200 250 300 350 400 450 500 550 600 650 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 100 Forward Voltage Drop 125ºC 25ºC Instantaneous Forward Drop (V) Instantaneous Forward Current (A) 1E-3 0.01 0.1 1 10 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s)

“Press-Fit” Fig. 7 - Outline Characteristics SEMICONDUTORES LTDA. AEGIS A6A:50.XX