A3L:40TT.XXI AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A3L:40TT.XXI O O O O O O O O O O O O O VOLTAGE RATINGS VRSM ,V R (V) Max. non- rep. peak reverse voltage TJ =0t o1 2 5C TJ = -40 to 0 C T J =2 5t o1 2 5C A3L:40TT.02I 200 200 300 A3L:40TT.04I 400 400 500 A3L:40TT.06I 600 600 700 A3L:40TT.08I 800 800 900 A3L:40TT.10I 1000 1000 1100 A3L:40TT.12I 1200 1200 1300 A3L:40TT.14I 1400 1330 1500 A3L:40TT.16I 1600 1520 1700 V RRM , VR (V) Max. rep. peak reverse voltagePart Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 125 C -40 to 150 C Max. Av. current 40 A @ Max. TC 85 C 89 A 0.72 50 Hz half cycle sine wave 0.78 60 Hz half cycle sine wave 0.82 50 Hz half cycle sine wave 0.89 60 Hz half cycle sine wave 2.66 t = 10ms 2.89 t = 8.3 ms 3.03 t = 10ms 3.3 t = 8.3 ms 36.1 kA 2s1/2

150 A//c109s

2.5 W 150 mA 3(5) N.m PGM Max. Peak gate power IF(RMS) Nom. RMS current - t p<5m s Initial TJ = 125 C, no voltage applied after surge. IFSM Max. Peak non-rep. surge current kA I2t Max. I2t capability kA 2s Initial TJ = 125 C, rated VRRM applied after surge. IF(AV) NOTES Initial TJ = 125 C, rated VRRM applied after surge. 180 half sine wave PARAMETER TJ Junction Temperature Tstg Storage Temperature Initial TJ = 125 C, no voltage applied after surge. I2t1/2 Max. I2t1/2 capability di/dt Max. Non-repetitive rate-of- rise current Initial TJ = 125 C, no voltage applied after surge. I 2t for time tx =I 2t1/2 *t x TJ = 125 C, VD =V DRM,I TM = 1600A. Gate pulse: 20V, 20/c87, 10/c109s, 0.5/c109s rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. PG(AV) Max. Av. gate power - +IGM Max. Peak gate current t p<5m s -VGM Max. Peak negative gate voltage - F Mounting Force Upper connectors(Heatsink)

O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics O O O O O O O O O O O O SEMICONDUTORES LTDA. AEGIS A3L:40TT.XXI CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VTM peak on-state voltage --- --- 1.84 V IL Latching current --- --- 400 mA IH Holding current --- --- 200 mA td Delay time --- 0.7 1.5 /c109s tq Turn-off time --- 125 200 /c109s 80 140 --- --- --- 500 IRM,I DM Peak reverse and off- state current --- 10 15 mA 50 80 150 TC =2 5C 2 --- 2.5 TC =2 5C VGD DC gate voltage not to trigger --- --- 0.2 V --- --- 0.3 C/W --- --- 0.329 C/W --- --- 0.355 C/W R thCS Thermal resistance, case-to-sink --- --- 0.1 C/W wt Weight --- 110(4) --- g(oz.) Case Style JEDEC Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 126A. Use low values for ITM < /c112rated IT(AV) TEST CONDITIONS --- TJ = 125 C Av. power = VT(TO) *I T(AV) +rT *[ IT(RMS)]2, 180 Half Sine. TC = 125 C, 12V anode. Gate pulse: 10V, 20/c87, 100/c109s. Higher dv/dt values avaliable. TJ = 125 C. Exp. to 100% or lin. To 80% VDRM, gate open. TJ = 125 C, Exp. To 67% VDRM, gate open. RthJC Thermal resistance, junction-to-case TJ = 125 C, ITM = 500A, di/dt = 25A//c109s, VR = 50V. dv/dt = 20 V//c109s lin. to rated VDRM. Gate: 0V, 100/c87. V m/c87 TC = 25 C, 12V anode. Initial IT = 15A. TC =2 5C ,V D =V DRM, 50A resistive load. Gate pulse: 10V, 20/c87,1 0/c109s, 1/c109s rise time. TJ = 125 C, Rated VRRM and VDRM, gate open. +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. dv/dt Critical rate-of-rise of off-state voltage IGT DC gate current to trigger ---TO-240AA V//c109s mA V Mtg. Surface smooth, flat and greased. Single side cooled. TC = 25 C, Max. Value which will not trigger with rated VDRM anode. DC operation, single side cooled. 180 sine wave, single side cooled. 5.25 120 rectangular wave, single side cooled. VT(TO) Threshold voltage --- --- 1 rT Slope resistance --- --- VGT DC gate voltage to trigger 0 1 02 03 04 05 06 0 100 110 120 *Sinusoidal Waveform 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 1 02 03 04 05 06 07 08 0 100 110 120 *Rectangular Waveform DC180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

Fig. 5 - Forward Voltage Drop Characteristics F i g .6-Transient Thermal Impedance Fig.3 -Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics SEMICONDUTORES LTDA. AEGIS A3L:40TT.XXI 0 1 02 03 04 05 06 07 08 09 0 100 200 300 400 500 600 700 *Sinusoidal Waveform 180º 120º 90º 60º 30º Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 1 02 03 04 05 06 07 08 09 0 100 200 300 400 500 *Rectangular Waveform DC 180º 120º 90º 60º 30º Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 012345 100 1000 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 0.01 0.1 1 10 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC Time (s)

Fig. 8 - Outline Characteristics Fig. 7 - Gate Trigger Characteristics SEMICONDUTORES LTDA. AEGIS A3L:40TT.XXI Fig. 9 - Circuit Layout ~ +- 1 2 3 G2K1 K2