A3L:25DT.XXI AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A3L:25DT.XXI O O O O O O O O O O O O O VOLTAGE RATINGS VRSM ,V R (V) Max. non- rep. peak reverse voltage TJ =0t o1 2 5C TJ = -40 to 0 C T J =2 5t o1 2 5C A3L:25TD.02I 200 200 300 A3L:25TD.04I 400 400 500 A3L:25TD.06I 600 600 700 A3L:25TD.08I 800 800 900 A3L:25TD.10I 1000 1000 1100 A3L:25TD.12I 1200 1200 1300 A3L:25TD.14I 1400 1330 1500 A3L:25TD.16I 1600 1520 1700 V RRM , VR (V) Max. rep. peak reverse voltagePart Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 125 C -40 to 150 C Max. Av. current 25 A @ Max. TC 85 C 55 A 0.5 50 Hz half cycle sine wave 0.54 60 Hz half cycle sine wave 0.57 50 Hz half cycle sine wave 0.62 60 Hz half cycle sine wave 1.3 t = 10ms 1.41 t = 8.3 ms 1.48 t = 10ms 1.61 t = 8.3 ms 17.7 kA 2s1/2

500 A//c109s

3(5) N.m -VGM Max. Peak negative gate voltage - F Mounting Force Upper connectors(Heatsink) PG(AV) Max. Av. gate power - +IGM Max. Peak gate current t p<5m s Initial TJ = 125 C, no voltage applied after surge. I2t1/2 Max. I2t1/2 capability di/dt Max. Non-repetitive rate-of- rise current Initial TJ = 125 C, no voltage applied after surge. I 2t for time tx =I 2t1/2 *t x TJ = 125 C, VD =V DRM,I TM = 1600A. Gate pulse: 20V, 20/c87, 10/c109s, 0.5/c109s rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. IF(AV) NOTES Initial TJ = 125 C, rated VRRM applied after surge. 180 half sine wave PARAMETER TJ Junction Temperature Tstg Storage Temperature PGM Max. Peak gate power IF(RMS) Nom. RMS current - t p<5m s Initial TJ = 125 C, no voltage applied after surge. IFSM Max. Peak non-rep. surge current kA I2t Max. I2t capability kA 2s Initial TJ = 125 C, rated VRRM applied after surge.

O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics O O O CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VTM peak on-state voltage --- --- 2 V IL Latching current --- --- 400 mA IH Holding current --- --- 200 mA td Delay time --- 0.7 1.5 /c109s tq Turn-off time --- 125 200 /c109s 80 140 500 --- --- 250 IRM,I DM Peak reverse and off- state current --- 10 15 mA 50 80 150 TC =2 5C 2 --- 2.5 TC =2 5C VGD DC gate voltage not to trigger --- --- 0.2 V --- --- 0.4 C/W --- --- 0.463 C/W --- --- 0.491 C/W R thCS Thermal resistance, case-to-sink --- --- 0.1 C/W wt Weight --- 110(4) --- g(oz.) Case Style JEDEC Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 79A. Use low values for ITM < /c112rated IT(AV) TEST CONDITIONS --- TJ = 125 C Av. power = VT(TO) *I T(AV) +rT *[ IT(RMS)]2, 180 Half Sine. TC = 125 C, 12V anode. Gate pulse: 10V, 20/c87, 100/c109s. Higher dv/dt values avaliable. TJ = 125 C. Exp. to 100% or lin. To 80% VDRM, gate open. TJ = 125 C, Exp. To 67% VDRM, gate open. RthJC Thermal resistance, junction-to-case TJ = 125 C, ITM = 500A, di/dt = 25A//c109s, VR = 50V. dv/dt = 20 V//c109s lin. to rated VDRM. Gate: 0V, 100/c87. V m/c87 TC = 25 C, 12V anode. Initial IT = 15A. TC =2 5C ,V D =V DRM, 50A resistive load. Gate pulse: 10V, 20/c87,1 0/c109s, 1/c109s rise time. TJ = 125 C, Rated VRRM and VDRM, gate open. +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. dv/dt Critical rate-of-rise of off-state voltage IGT DC gate current to trigger ---TO-240AA V//c109s mA V Mtg. Surface smooth, flat and greased. Single side cooled. TC = 25 C, Max. Value which will not trigger with rated VDRM anode. DC operation, single side cooled. 180 sine wave, single side cooled. 12.6 120 rectangular wave, single side cooled. VT(TO) Threshold voltage --- --- 0.95 rT Slope resistance --- --- VGT DC gate voltage to trigger O O O O O O O O O 0 1 02 03 04 0 100 110 120 *Sinusoidal Waveform 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 1 02 03 04 05 0 100 110 120 *Rectangular Waveform DC180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) SEMICONDUTORES LTDA. AEGIS A3L:25DT.XXI

Fig. 5 - Forward Voltage Drop Characteristics F i g .6-Transient Thermal Impedance Fig.3 -Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics 0 1 02 03 04 05 06 0 100 200 300 400 500 600 700 *Sinusoidal Waveform 180º 120º 90º 60º 30º Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 1 02 03 04 05 06 0 100 200 300 400 500 *Rectangular Waveform DC 180º 120º 90º 60º 30º Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0.01 0.1 1 10 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC Time (s) 012345 100 1000 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) SEMICONDUTORES LTDA. AEGIS A3L:25DT.XXI

Fig. 9 - Circuit Layout Fig. 7 - Gate Trigger Characteristics Fig. 8 - Outline Characteristics SEMICONDUTORES LTDA. AEGIS A3L:25DT.XXI ~ +- 1 2 3 G2K1 K2