A1N:180.XXH AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A1N:180.XXH O O O O O O O O O O O O This datasheet applies to: Metric thread: A1N:180.XXH Inch thread: A2N:180.XXH O VOLTAGE RATINGS VRSM , VR (V) Max. non- rep. peak reverse voltage TJ = 0 to 125 C TJ = -40 to 0 C TJ = 25 to 125 C A1N:180.02H 200 200 300 A1N:180.04H 400 400 500 A1N:180.06H 600 600 700 A1N:180.08H 800 800 900 A1N:180.10H 1000 1000 1100 A1N:180.12H 1200 1200 1300 A1N:180.14H 1400 1330 1500 A1N:180.16H 1600 1520 1700 VRRM , VR (V) Max. rep. peak reverse voltage Part Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 125 C -40 to 150 C Max. Av. current 180 A @ Max. TC 85 C 285 A 4.54 50 Hz half cycle sine wave 4.94 60 Hz half cycle sine wave 5.23 50 Hz half cycle sine wave 5.70 60 Hz half cycle sine wave 88.40 t = 10ms 96.35 t = 8.3 ms 124.77 t = 10ms 136.00 t = 8.3 ms 1490 kA2s1/2

800 A/ms

31 N.m -VGM Max. Peak negative gate voltage - F Mounting Force Non lubricated threads PG(AV) Max. Av. gate power - +IGM Max. Peak gate current tp < 5 ms I2t1/2 Max. I2t1/2 capability di/dt Max. Non-repetitive rate-of- rise current Initial TJ = 125 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx TJ = 125 C, VD = VDRM, ITM = 1600A. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. I2t Max. I2t capability kA2s Initial TJ = 125 C, rated VRRM applied after surge. Initial TJ = 125 C, no voltage applied after surge. kA PARAMETER TJ Junction Temperature Tstg Storage Temperature IT(AV) NOTES Initial TJ = 125 C, rated VRRM applied after surge. 180 half sine wave PGM Max. Peak gate power IT(RMS) Nom. RMS current - tp < 5 ms Initial TJ = 125 C, no voltage applied after surge. ITSM Max. Peak non-rep. surge current

O O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics O O O O O O O O O O O SEMICONDUTORES LTDA. AEGIS A1N:180.XXH 0 20 40 60 80 100 120 140 160 180 100 105 110 115 120 125 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 20 40 60 80 100 120 140 160 180 200 220 240 100 105 110 115 120 125 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VTM peak on-state voltage --- --- 1.61 V IL Latching current --- --- 400 mA IH Holding current --- --- 500 mA td Delay time --- 0.7 1 ms tq Turn-off time --- --- 100 ms dv/dt Critical rate-of-rise of off-state voltage --- --- 1000 V/ms IRM, IDM Peak reverse and off- state current --- 15 30 mA VGD DC gate voltage not to trigger --- --- 0.3 V --- --- 0.14 C/W --- --- 0.16 C/W --- --- 0.164 C/W RthCS Thermal resistance, case-to-sink --- --- 0.08 C/W wt Weight --- 280(10.34) --- g(oz.) Case Style JEDEC Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 565A. Use low values for ITM < p rated IT(AV) TEST CONDITIONS --- TJ = 125 C Av. power = VT(TO) * IT(AV) +rT * [IT(RMS)]2, 180 Half Sine. TC = 125 C, 12V anode. Gate pulse: 10V, 20W, 100ms. TJ = 125 C, Exp. To 67% V DRM, gate open. RthJC Thermal resistance, junction-to-case TJ = 125 C, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated VDRM. Gate: 0V, 100W. V mW TC = 25 C, 12V anode. Initial IT = 15A. TC = 25 C, VD = VDRM, 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. TJ = 125 C, Rated VRRM and VDRM, gate open. +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. IGT DC gate current to trigger ---TO-209AB(TO-93) mA V Mtg. Surface smooth, flat and greased. Single side cooled. TC = 25 C, Max. Value which will not trigger with rated VDRM anode. DC operation, single side cooled. 180 sine wave, single side cooled. 1.32 120 rectangular wave, single side cooled. VT(TO) Threshold voltage --- --- 0.854 rT Slope resistance --- --- VGT DC gate voltage to trigger

Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics SEMICONDUTORES LTDA. AEGIS A1N:180.XXH 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 300 1000 2000 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 100 200 300 500 1000 1500 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 100 1000 10000 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 10-3 10-2 10-1 100 101 10-2 10-1 100 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s)

M16 x 1.5 3/4 UNF 2A SW32 Fig. 7 - Gate Trigger Characteristics TO-209AB (TO-93) Fig. 8 - Outline Characteristics SEMICONDUTORES LTDA. AEGIS A1N:180.XXH 1E-3 0.01 0.1 1 10 100 1000 0.1 100 (b) (a)TJ=-40ºC TJ=25ºC TJ=140ºC IGD VGD Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 30W; tr<=0.5ms, tp=>6ms. b)Recommended load line for <=30% rated di/dt: 15V, 40W; tr<=1ms, tp=>6ms. (1) PGM = 12W, tp = 5ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 200W, tp = 300ms (4)(3)(2)(1) Gate Characteristics Instantaneous Gate Voltage (V) Instantaneous Gate Current (A)