A6A:30.01 AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A6A:30.XX O O O O O O O O O O O O VOLTAGE RATINGS VRSM , VR (V) Max. non- rep. peak reverse voltage TJ = 0 to 150 C TJ = -40 to 0 C TJ = 25 to 150 C A6A:30.01 100 100 200 A6A:30.02 200 200 300 A6A:30.04 400 400 500 A6A:30.06 600 600 700 A6A:30.08 800 800 900 VRRM , VR (V) Max. rep. peak reverse voltage Part Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 150 C -40 to 150 C Max. Av. current 30 A @ Max. TC 150 C 47 A 288 50 Hz half cycle sine wave 314 60 Hz half cycle sine wave 360 50 Hz half cycle sine wave 377 60 Hz half cycle sine wave 452 t = 10ms 415 t = 8.3 ms 648 t = 10ms 590 t = 8.3 ms

9.165 A2s1/2

IFSM Max. Peak non-rep. surge current IF(AV) PARAMETER TJ Junction Temperature Tstg Storage Temperature - NOTES Initial TJ = 150 C, rated VRRM applied after surge. 180 half sine wave Initial TJ = 150 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability IF(RMS) Nom. RMS current - I2t Max. I2t capability A2s Initial TJ = 150 C, rated VRRM applied after surge. Initial TJ = 150 C, no voltage applied after surge. A Initial TJ = 150 C, no voltage applied after surge. This datasheet applies to: A6A:30.XX, A6B:30.XX For long lead, add “L” to the end of part number

O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics SEMICONDUTORES LTDA. AEGIS A6A:30.XX CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- --- 1.30 V VF(TO)1 Low-level threshold --- --- 0.73 VF(TO)2 High-level threshold --- --- 0.95 rF1 Low-level resistance --- --- 6.00 rF2 High-level resistance --- --- 3.00 IRM Peak reverse current --- --- 4.00 mA RthJC Thermal resistance, junction-to-case --- --- 1.14 C/W RthCS Thermal resistance, case-to-sink --- --- 0.55 C/W wt Weight --- 10(0.36) --- g(oz.) Case Style Press-fit --- V mW DC operation Initial TJ = 25 C, sinusoidal wave, Ipeak = 94A. Use low values for IFM < pIF(AV) TJ = 180 C. Max. Rated VRRM TEST CONDITIONS Mtg. Surface smooth, flat and greased. Single side. --- --- TJ = 180 C Av. power = VF(TO) * IF(AV) +rF * [IF(RMS)]2 0 10 20 30 100 105 110 115 120 125 130 135 140 145 150 180º 120º 90º 60º 30º Maximum Allowable Case Temperature *Sinusoidal waveform Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 5 10 15 20 25 30 35 40 45 50 100 110 120 130 140 150 DC 180º 120º 90º 60º 30º Maximum Allowable Case Temperature *Rectangular waveform Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

Fig. 3 - Average Forward Power Loss Characteristics Fig. 4 - Average Forward Power Loss Characteristics Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance ZthJC Characteristics SEMICONDUTORES LTDA. AEGIS A6A:30.XX 0 5 10 15 20 25 30 35 40 45 50 100 150 200 250 300 350 400 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 5 10 15 20 25 30 35 40 45 50 100 120 140 160 180 200 220 240 260 280 300 320 340 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 100 1000 1 2 3 4 5 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) 1E-3 0.01 0.1 1 10 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s)

“Press-Fit” Fig. 7 - Outline Characteristics SEMICONDUTORES LTDA. AEGIS A6A:30.XX