A5N:850.12H

A5N:850.12H AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A5N:850.XXH O O O O O O O O O O O O O VOLTAGE RATINGS VRSM , VR (V) Max. non- rep. peak reverse voltage TJ = 0 to 125 C TJ = -40 to 0 C TJ = 25 to 125 C A5N:850.12H 1200 1200 1300 A5N:850.14H 1400 1400 1500 A5N:850.16H 1600 1600 1700 A5N:850.18H 1800 1800 1900 A5N:850.20H 2000 2000 2100 VRRM , VR (V) Max. rep. peak reverse voltage Part Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 125 C -40 to 150 C Max. Av. current 850 A @ Max. TC 75 C 1320 A 14.80 50 Hz half cycle sine wave 16.13 60 Hz half cycle sine wave 16.88 50 Hz half cycle sine wave 18.40 60 Hz half cycle sine wave 1138 t = 10ms 1240 t = 8.3 ms 1298 t = 10ms 1415 t = 8.3 ms 15500 kA2s1/2

800 A/ms

1550 N.m PGM Max. Peak gate power IT(RMS) Nom. RMS current - tp < 5 ms Initial TJ = 125 C, no voltage applied after surge. ITSM Max. Peak non-rep. surge current kA I2t Max. I2t capability kA2s Initial TJ = 125 C, rated VRRM applied after surge. IT(AV) NOTES Initial TJ = 125 C, rated VRRM applied after surge. 180 half sine wave PARAMETER TJ Junction Temperature Tstg Storage Temperature Initial TJ = 125 C, no voltage applied after surge. I2t1/2 Max. I2t1/2 capability di/dt Max. Non-repetitive rate-of- rise current Initial TJ = 125 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx TJ = 125 C, VD = VDRM, ITM = 1600A. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. PG(AV) Max. Av. gate power - +IGM Max. Peak gate current tp < 5 ms -VGM Max. Peak negative gate voltage - F Mounting Force -

O O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics O O O O O O O O O O O SEMICONDUTORES LTDA. AEGIS A5N:850.XXH CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VTM peak on-state voltage --- --- 1.75 V IL Latching current --- --- 400 mA IH Holding current --- --- 500 mA td Delay time --- 0.7 1 ms tq Turn-off time --- --- 100 ms dv/dt Critical rate-of-rise of off-state voltage --- --- 1000 V/ms IRM, IDM Peak reverse and off- state current --- 30 60 mA VGD DC gate voltage not to trigger --- --- 0.3 V --- --- 0.035 C/W --- --- 0.041 C/W --- --- 0.042 C/W RthCS Thermal resistance, case-to-sink --- --- 0.015 C/W wt Weight --- 255(9.3) --- g(oz.) Case Style JEDEC Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 2670A. Use low values for ITM < p rated IT(AV) TEST CONDITIONS --- TJ = 125 C Av. power = VT(TO) * IT(AV) +rT * [IT(RMS)]2, 180 Half Sine. TC = 125 C, 12V anode. Gate pulse: 10V, 20W, 100ms. TJ = 125 C, Exp. To 67% V DRM, gate open. RthJC Thermal resistance, junction-to-case TJ = 125 C, ITM = 550A, di/dt = 40A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated VDRM. Gate: 0V, 100W. V mW TC = 25 C, 12V anode. Initial IT = 15A. TC = 25 C, VD = VDRM, 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. TJ = 125 C, Rated VRRM and VDRM, gate open. +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. IGT DC gate current to trigger 0.348 ---TO-200AC mA V Mtg. Surface smooth, flat and greased. Double side cooled. TC = 25 C, Max. Value which will not trigger with rated VDRM anode. DC operation, double side cooled. 180 sine wave, double side cooled. 120 rectangular wave, double side cooled. VT(TO) Threshold voltage --- --- 0.908 rT Slope resistance --- --- VGT DC gate voltage to trigger 0 100 200 300 400 500 600 700 800 900 100 105 110 115 120 125 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 100 200 300 400 500 600 700 800 900 100011001200 100 105 110 115 120 125 DC180º 120º 90º 60º 30º *Rectangular waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics SEMICONDUTORES LTDA. AEGIS A5N:850.XXH 0 200 400 600 800 1000 1200 1400 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 200 400 600 800 1000 1200 1400 2000 4000 6000 8000 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 100 1000 10000 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 10-3 10-2 10-1 100 101 10-3 10-2 10-1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s)

Fig. 7 - Gate Trigger Characteristics TO-200AC Fig. 8 - Outline Characteristics 1E-3 0.01 0.1 1 10 100 1000 0.1 100 (b) (a)TJ=-40ºC TJ=25ºC TJ=140ºC IGD VGD Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 30W; tr<=0.5ms, tp=>6ms. b)Recommended load line for <=30% rated di/dt: 15V, 40W; tr<=1ms, tp=>6ms. (1) PGM = 12W, tp = 5ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 200W, tp = 300ms (4)(3)(2)(1) Gate Characteristics Instantaneous Gate Voltage (V) Instantaneous Gate Current (A) SEMICONDUTORES LTDA. AEGIS A5N:850.XXH