A5N:1000.22H AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A5N:1000.XXH O O O O O O O O O O O O O MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 125 C -40 to 150 C Max. Av. current 1000 A @ Max. TC 74 C 1600 A 14000 50 Hz half cycle sine wave 15000 60 Hz half cycle sine wave 937000 t = 10ms 973000 t = 8.3 ms 46700 kA2s1/2

300 A//c109s

t p=4 0 /c109s PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage I T(AV) A A2s PARAMETER TJ Junction Temperature Tstg Storage Temperature ITSM Max. Peak non-rep. surge current I2t Max. I2t capability NOTES Initial TJ = 125 C, rated VRRM applied after surge. 180 half sine wave Initial TJ = 125 C, no voltage applied after surge. I2t for time tx =I 2t1/2 *t x 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IT(RMS) Nom. RMS current - Initial TJ = 125 C, rated VRRM applied after surge. di/dt Max. Non-repetitive rate-of- rise current TJ = 125 C, VD =V DRM,I TM = 3000A. Gate pulse: 20V, 20/c87, apriximately 40% of non-repetitive value. PGM Max. Peak gate power VOLTAGE RATINGS VRSM ,V R – (V) Max. non- rep. peak reverse voltage TJ =0t o1 2 5C TJ = -40 to 0 C T J =2 5t o1 2 5C A5N:1000.22H 2200 2200 2300 A5N:1000.24H 2400 2400 2500 A5N:1000.26H 2600 2600 2700 A5N:1000.28H 2800 2800 2900 A5N:1000.30H 3000 3000 3100 A5N:1000.32H 3200 3200 3300 V RRM , VR – (V) Max. rep. peak reverse voltagePart Number

O O O O O O O O O O O O O O O O O O O O O O SEMICONDUTORES LTDA. AEGIS A5N:1000.XXH CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VTM peak on-state voltage --- --- 2.26 V VF(TO)1 Low-level threshold --- --- 1.31 VF(TO)2 High-level threshold --- --- 1.55 rT1 Low-level resistance --- --- 0.48 rT2 High-level resistance --- --- 0.38 IL Latching current --- --- 800 mA IH Holding current --- --- 400 mA td Delay time --- 0.7 1.5 /c109s tq Turn-off time --- 125 250 /c109s tq(diode) Turn-off time with feedback diode --- --- 50 /c109s IRM(REC) Recovery current --- 93 --- A QRR Recovered charge --- 166 --- /c109C 300 --- 1000 --- --- 300 IRM,I DM Peak reverse and off- state current --- 15 75 mA --- 40 300 TC = -40 C --- 20 150 TC =2 5C 0.3 --- 3 TC =2 5C VGD DC gate voltage not to trigger --- --- 0.200 V --- --- 0.025 C/W --- --- 0.025 C/W --- --- 0.027 C/W R thCS Thermal resistance, case-to-sink --- --- 0.010 C/W wt Weight --- 460(16.0) --- g(oz.) Case Style --- JEDEC TEST CONDITIONS --- --- TJ = 125 C Av. power = VT(TO) *I T(AV) +rT *[ IT(RMS)]2, 180 Half Sine. TC = 125 C, 12V anode. Gate pulse: 10V, 20/c87, 100/c109s. Higher dv/dt values avaliable. TJ = 125 C. Exp. to 100% or lin. To 80% VDRM, gate open. TJ = 125 C, Exp. To 67% VDRM, gate open. TJ = 125 C, ITM = 1000A, di/dt = 25A//c109s, VR = -50V. dv/dt = 20 V//c109s lin. To 80% rated VDRM. Gate: 0V, 100/c87. dv/dt Critical rate-of-rise of off- state voltage IGT DC gate current to trigger VGT DC gate voltage to trigger Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 3000A. Use low values for ITM < /c112rated IT(AV) TJ = 125 C, ITM = 1000A, diR/dt = 25A//c109s. 180 sine wave, double side coolde. 120 rectangular wave, double side cooled. V m/c87 TC = 25 C, 12V anode. Initial IT = 15A. TJ = 125 C, Rated VRRM and VDRM, gate open. +6V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. TJ = 125 C, ITM = 1000A, di/dt = 25A//c109s, VR = 1V. dv/dt = 600 V//c109s lin. To 40% rated VDRM. Gate: 0V, 100/c87. TC =2 5C ,V D = rated VDRM, 50A resistive load. Gate pulse: 10V, 20/c87,2 0/c109s, 0.1/c109s rise time. RthJC Thermal resistance, junction-to-case TO-200AD V//c109s mA V Mtg. Surface smooth, flat and greased. Single side cooled. For double side, divide by 2. TC = 25 C, Max. Value which will not trigger with rated VDRM anode-to-cathode. DC operation, double side cooled.

Fig. 1 - Current Ratings Characteristics A1F:400.XXHY (Single Side Cooled) R (DC) = 0.09K/WthJ-hs A1F:400.XXHY (Single Side Cooled) R (DC) = 0.09K/WthJ-hs Fig. 2 - Current Ratings Characteristics A1F:400.XXHY (Single Side Cooled) R (DC) = 0.09K/WthJ-hs A1F:400.XXHY (Single Side Cooled) R (DC) = 0.09K/WthJ-hs Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics 0 100 200 300 400 500 600 700 800 900 1000 100 110 120 130 *Sinusoidal Waveform 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 500 1000 100 110 120 130 DC 180º 120º 90º 60º 30º *Rectangular Waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 4000 6000 8000 10000 12000 180º 120º 90º 60º 30º *Sinusoidal Waveform Maximum On-State Power Dissipation Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 500 1000 1500 2000 4000 6000 8000 10000 * Rectangular Waveform DC 180º 120º 90º 60º 30º Maximum On-State Power Dissipation Maximum Average Forward Power Loss (W) Average Forward Current (A) SEMICONDUTORES LTDA. AEGIS A5N:1000.XXH

125ºC 25ºC Forward Voltage Drop Characteristics Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) Fig. 5 - Forward Voltage Drop Characteristics F i g .6-Transient Thermal Impedance Z Characteristics thJC TO-200AD Steady State Value: RthJC=0.025 ºC/W (DC Operation) Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s) SEMICONDUTORES LTDA. AEGIS A5N:1000.XXH