A5F_600 AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A5F:600.XXHY MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 125 C -40 to 150 C Max. Av. current 600 A @ Max. TC 70 C 1015 A 12000 50 Hz half cycle sine wave 12500 60 Hz half cycle sine wave 14000 50 Hz half cycle sine wave 15000 60 Hz half cycle sine wave 710 t = 10ms 650 t = 8.3 ms 1000 t = 10ms 920 t = 8.3 ms 10000 kA 2s1/2

800 A//c109s

J = 200 C, no voltage applied after surge. I2t for time tx =I 2t1/2 *t x 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA 2s Initial TJ = 200 C, rated VRRM applied after surge. Initial TJ = 200 C, no voltage applied after surge. NOTES Initial TJ = 200 C, rated VRRM applied after surge. A 180 half sine wave Initial TJ = 200 C, no voltage applied after surge. IF(AV) PARAMETER TJ Junction Temperature Tstg Storage Temperature di/dt Max. Non-repetitive rate-of- rise current IFSM Max. Peak non-rep. surge current TJ = 125 C, VD =V DRM,I TM = 1600A. Gate pulse: 20V, 20/c87, apriximately 40% of non-repetitive value. PGM Max. Peak gate power t p<5m s PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage t p<5m s O O O O O O O O O O VOLTAGE RATINGS VRSM ,V R – (V) Max. non- rep. peak reverse voltage TJ = 0 to 125ºC TJ = -40 to 0ºC T J = 25 to 125ºC A5F:600.02HY 200 200 300 A5F:600.04HY 400 400 500 A5F:600.06HY 600 600 700 A5F:600.08HY 800 800 900 A5F:600.10HY 1000 1000 1100 A5F:600.12HY 1200 1200 1300 A5F:600.14HY 1400 1330 1500 A5F:600.16HY 1600 1520 1700 A5F:600.18HY 1800 1710 1900 A5F:600.20HY 2000 1900 2100 V RRM , VR – (V) Max. rep. peak reverse voltagePart Number

SEMICONDUTORES LTDA. AEGIS A5F:600.XXHY CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VTM peak on-state voltage --- 2.15 2.45 V VF(TO)1 Low-level threshold --- --- 1.31 VF(TO)2 High-level threshold --- --- 1.55 rT1 Low-level resistance --- --- 0.48 rT2 High-level resistance --- --- 0.38 IL Latching current --- 350 --- mA IH Holding current --- 120 500 mA td Delay time --- 0.5 1.5 /c109s tq Turn-off time --- --- 60 /c109s tq(diode) Turn-off time with feedback diode --- --- 50 /c109s IRM(REC) Recovery current --- 93 --- A QRR Recovered charge --- 166 --- /c109C 500 700 --- 1000 --- --- IRM,I DM Peak reverse and off- state current --- 30 60 mA 50 80 150 TC =2 5C VGD DC gate voltage not to trigger --- --- 0.3 V --- --- 0.035 C/W --- --- 0.041 C/W --- --- 0.042 C/W R thCS Thermal resistance, case-to-sink --- --- 0.0300 C/W wt Weight --- 255(9.0) --- g(oz.) Case Style --- JEDEC 120 rectangular wave, double side cooled. TJ = 125 C, Rated VRRM and VDRM, gate open. +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. TO-200AC V//c109s mA V Mtg. Surface smooth, flat and greased. Single side cooled. For double side, divide by 2. TC = 25 C, Max. Value which will not trigger with rated VDRM anode-to-cathode. DC operation, double side coolde. 180 sine wave, double side coolde. dv/dt Critical rate-of-rise of off- state voltage IGT DC gate current to trigger VGT DC gate voltage to trigger RthJC Thermal resistance, junction-to-case V m/c87 TC = 25 C, 12V anode. Initial IT = 15A. TC =2 5C ,V D = rated VDRM, 50A resistive load. Gate pulse: 10V, 20/c87,1 0/c109s, 1/c109s rise time. TJ = 125 C, ITM = 750A, diR/dt = 50A//c109s. Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 2025A. Use low values for ITM < /c112rated IT(AV) TJ = 125 C, ITM = 500A, di/dt = 25A//c109s, VR = 1V. dv/dt = 600 V//c109s lin. To 40% rated VDRM. Gate: 0V, 100/c87. TEST CONDITIONS --- --- TJ = 125 C Av. power = VT(TO) *I T(AV) +rT *[ IT(RMS)]2 TC = 125 C, 12V anode. Gate pulse: 10V, 20/c87, 100/c109s. Higher dv/dt values avaliable. TJ = 125 C. Exp. to 100% or lin. To 80% VDRM, gate open. TJ = 125 C, Exp. To 67% VDRM, gate open. TJ = 125 C, ITM = 500A, di/dt = 25A//c109s, VR = 50V. Dv/dt = 200 V//c109s lin. To 80% rated VDRM. Gate: 0V, 100/c87. O O O O O O O O O O O O O O O O O O O O O O O

SEMICONDUTORES LTDA. AEGIS A5F:600.XXHY

SEMICONDUTORES LTDA. AEGIS A5F:600.XXHY

SEMICONDUTORES LTDA. AEGIS A5F:600.XXHY TO-200AC