A5F:1000.02HY

A5F:1000.02HY AEGIS | Alldatasheet

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SEMICONDUTORES L TDA. AEGIS A5F:1000.XXHY O O O O O O O O O O O O O VOLTAGE RATINGS VRSM ,V R (V) Max. non- rep. peak reverse voltage TJ =0t o1 2 5C TJ = -40 to 0 C T J =2 5t o1 2 5C A5F:1000.02HY 200 200 300 A5F:1000.04HY 400 400 500 A5F:1000.06HY 600 600 700 A5F:1000.08HY 800 800 900 A5F:1000.10HY 1000 1000 1100 A5F:1000.12HY 1200 1200 1300 A5F:1000.14HY 1400 1400 1500 A5F:1000.16HY 1600 1600 1700 A5F:1000.18HY 1800 1800 1900 A5F:1000.20HY 2000 2000 2100 V RRM , VR (V) Max. rep. peak reverse voltagePart Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 125 C -40 to 150 C Max. Av. current 1000 A @ Max. TC 70 C 1500 A 19.3 50 Hz half cycle sine wave 21.1 60 Hz half cycle sine wave 22.1 50 Hz half cycle sine wave 24 60 Hz half cycle sine wave 1328 t = 10ms 1447 t = 8.3 ms 1514 t = 10ms 1650 t = 8.3 ms 25500 kA 2s1/2

800 A//c109s

2500 N.m TJ = 125 C, VD =V DRM,I TM = 3140A. Gate pulse: 20V, 20/c87, 10/c109s, 0.5/c109s rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. PGM Max. Peak gate power t p<5m s PG(AV) Max. Av. gate power PARAMETER TJ Junction Temperature Tstg Storage Temperature di/dt Max. Non-repetitive rate-of- rise current IFSM Max. Peak non-rep. surge current kA 180 half sine wave Initial TJ = 125 C, no voltage applied after surge. IF(AV) NOTES Initial TJ = 125 C, rated VRRM applied after surge. Initial TJ = 125 C, no voltage applied after surge. I 2t for time tx =I 2t1/2 *t x 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA 2s Initial TJ = 125 C, rated VRRM applied after surge. Initial TJ = 125 C, no voltage applied after surge. Rua Felicíssimo de Souza, 44 - CEP 05160-040 - Pirituba - São Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337

SEMICONDUTORES L TDA. AEGIS A5F:1000.XXHY O O O O O O O O O OO O O O O O O O O O Rua Felicíssimo de Souza, 44 - CEP 05160-040 - Pirituba - São Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337 CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VTM peak on-state voltage --- 2.22 2.36 V IL Latching current --- 270 --- mA IH Holding current --- 100 500 mA td Delay time --- 1.5 --- /c109s tq Turn-off time --- --- 15-60 /c109s IRM(REC) Recovery current --- 135 --- A 500 700 --- 1000 --- --- IRM,I DM Peak reverse and off- state current --- 100 --- mA VGD DC gate voltage not to trigger --- --- 0.3 V --- --- 0.023 C/W --- --- 0.026 C/W --- --- 0.027 C/W R thCS Thermal resistance, case-to-sink --- --- 0.01 C/W wt Weight --- 425(15) --- g(oz.) Case Style JEDEC A-24 TJ = 125 C, Rated VRRM and VDRM, gate open. +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. V//c109s mA V Mtg. Surface smooth, flat and greased. TC = 25 C, Max. Value which will not trigger with rated VDRM anode-to-cathode. DC operation. 180 sine wave, double side cooled. TC = 25 C, 12V anode. Initial IT = 10A. TC =2 5C ,V D = rated VDRM, 50A resistive load. Gate pulse: 10V, 20/c87,1 0/c109s, 1/c109s rise time. 120 rectangular wave, double side cooled. dv/dt Critical rate-of-rise of off- state voltage IGT DC gate current to trigger VGT DC gate voltage to trigger RthJC Thermal resistance, junction-to-case Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 3140A. Use low values for ITM < /c112rated IT(AV) TEST CONDITIONS V m/c87 --- --- TJ = 125 C Av. power = VT(TO) *I T(AV) +rT *[ IT(RMS)]2 TC = 25 C, 12V anode. Gate pulse: 10V, 20/c87, 100/c109s. Higher dv/dt values avaliable. TJ = 125 C. Exp. to 100% or lin. To 80% VDRM, gate open. TJ = 125 C, Exp. To 67% VDRM, gate open. TJ = 125 C, ITM = 500A, di/dt = 25A//c109s, VR = 50V. dv/dt = 200 V//c109s lin. To 80% rated VDRM. Gate: 0V, 100/c87. TJ = 125 C, ITM = 3140A, diR/dt = 50A//c109s. O O

SEMICONDUTORES L TDA. AEGIS A5F:1000.XXHY 0 200 400 600 800 1000 1200 100 110 120 180º 120º 90º 60º 30º Maximum Allowable Case Temperature *Sinusoidal waveform Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 250 500 750 1000 100 110 120 DC 180º 120º 90º 60º 30º Maximum Allowable Case Temperature *Rectangular waveform Maximum Allowable Case Temperature (ºC) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 0 250 500 750 1000 1250 1500 1500 3000 4500 6000 7500 9000 10500 12000 13500 15000 16500 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 500 1000 1500 1500 3000 4500 6000 7500 9000 10500 12000 13500 15000 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics Rua Felicíssimo de Souza, 44 - CEP 05160-040 - Pirituba - São Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337

SEMICONDUTORES L TDA. AEGIS A5F:1000.XXHY 100 1000 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) 1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics 1x10 1x10 1x10 10000 15 kHz 10 kHz 5k H z 2k H z 1k H z *Sinusoidal pulse Tc =6 0 º C 50 Hz 500 Hz 200 Hz 100 Hz Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s) 1x10 1x10 10000 15 kHz 10 kHz 5k H z 2k H z 1k H z 50 Hz 100 Hz 200 Hz 500 Hz *Rectangular pulse Tc = 60ºC Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s) Fig. 7 - Frequency Characteristics Fig. 8 - Frequency Characteristics Rua Felicíssimo de Souza, 44 - CEP 05160-040 - Pirituba - São Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337

SEMICONDUTORES L TDA. AEGIS A5F:1000.XXHY 1x10 1x10 10000 15 kHz 10 kHz 5k H z 2k H z 1k H z 500 Hz 200 Hz 100 Hz 50 Hz *Sinusoidal Pulse Tc = 80ºC Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s) 1x10 1x10 10000 15 kHz 10 kHz *Rectangular Pulse Tc = 80ºC 50 Hz 100 Hz 200 Hz

500 Hz1k H z

Peak On-State Current (A) Pulse Basewidth (/c63s) 1x10 1x10 10000 15 kHz *Sinusoidal pulse Tc = 100ºC Frequency Characteristic

50 Hz100 Hz

Peak On-State (A) Pulse Basewidth (/c63s) 1x10 1x10 1000 10000 15 kHz 10 kHz 5k H z *Rectangular pulse Tc = 100ºC Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s) Fig. 9 - Frequency Characteristics Fig. 10 - Frequency Characteristics Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Rua Felicíssimo de Souza, 44 - CEP 05160-040 - Pirituba - São Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337

SEMICONDUTORES L TDA. AEGIS A5F:1000.XXHY 1x10 1x10 100 1000 10 J *Sinusoidal pulse Maximu On-State Energy Power Loss 0.5 J 0.2 J0.1 J 0.05 J 0.02 J0.01 J Peak On-State Current (A) Pulse Basewidth (/c63s) 1x10 100 1000 20 J 10 J *Rectangular pulse Maximu On-State Energy Power Loss 1J0.5 J 0.2 J 0.1 J 0.05 J 0.02 J 0.01 J Peak On-State Current (A) Pulse Basewidth (/c63s) 10 20 30 40 50 60 70 80 90 100 100 150 200 250 300 350 400 450 TJ = 125ºC 500A 1000A ITM = 1500A Reverse Recovery Charge Maximum Reverse Recovery Charge (/c63C) Rate of Fall of On-State Current - di/dt (A//c63s) 1E-3 0.01 0.1 1 10 100 0.1 100 Frequency Limited by PG(Av) TJ= -40ºC T = 25ºC TJ= 125ºC IGD VGD (b) (a) (3)(2)(1) (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 10/c63; tr<=1/c63s. b)Recommended load line for <=30% rated di/dt: 10V, 10/c63; tr<=1/c63s. Gate Characteristics Instantaneous Gate Voltage (V) Instantaneous Gate Current (A) Fig. 14 - Maximum On-State Energy Power Loss Characteristics Fig. 13 - Maximum On-State Energy Power Loss Characteristics Fig. 15 - Reverse Recovery Charge Characteristics Fig. 16 - Gate Trigger Characteristics Rua Felicíssimo de Souza, 44 - CEP 05160-040 - Pirituba - São Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337

SEMICONDUTORES L TDA. AEGIS A-24 A5F:1000.XXHY Fig. 17 - Outline Characteristics Rua Felicíssimo de Souza, 44 - CEP 05160-040 - Pirituba - São Paulo - SP - Brasil Telefone (phone): (5511) 3901-1093 - Fax: (5511) 3903-0337