A5A:870.24 AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A5A:870.XX O O O O O O O O O O O O VOLTAGE RATINGS VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 0 to 175 C TJ = -40 to 0 C TJ = 25 to 175 C A5A:870.24 2400 2400 2500 A5A:870.26 2600 2600 2700 A5A:870.28 2800 2800 2900 A5A:870.30 3000 2900 3100 VRRM , VR (V) Max. rep. peak reverse voltage Part Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 175 C -40 to 175 C Max. Av. current 675 A @ Max. TC 125 C 1350 A 10.70 50 Hz half cycle sine wave 11.67 60 Hz half cycle sine wave 12.75 50 Hz half cycle sine wave 13.90 60 Hz half cycle sine wave 523 t = 10ms 570 t = 8.3 ms 739 t = 10ms 806 t = 8.3 ms 8830 kA2s1/2 900 N.m Initial TJ = 175 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA2s Initial TJ = 175 C, rated VRRM applied after surge. Initial TJ = 175 C, no voltage applied after surge. NOTES Initial TJ = 175 C, rated VRRM applied after surge. kA 180 half sine wave Initial TJ = 175 C, no voltage applied after surge. IF(AV) PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current

O O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics SEMICONDUTORES LTDA. AEGIS A5A:870.XX CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- 1.75 1.94 V VF(TO)1 Low-level threshold --- --- 0.85 VF(TO)2 High-level threshold --- --- 0.864 rF1 Low-level resistance --- --- 0.54 rF2 High-level resistance --- --- 0.658 IRM Peak reverse current --- 15 50 mA --- --- 0.038 C/W --- --- 0.045 C/W --- --- 0.046 C/W RthCS Thermal resistance, case-to-sink --- --- 0.02 C/W wt Weight --- 85(3.0) --- g(oz.) Case Style TO-200AB JEDEC Mtg. Surface smooth, flat and greased. Double side. --- --- TJ = 175 C Av. power = VF(TO) * IF(AV) +rF * [IF(RMS)]2 Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 2121A. Use low values for IFM < pIF(AV) TJ = 175 C. Max. Rated VRRM TEST CONDITIONS RthJC Thermal resistance, junction-to-case V mW DC operation, double side 180 sine wave, double side 120 rectangular wave, duble side 0 100 200 300 400 500 600 700 800 900 100 110 120 130 140 150 160 170 *Sinusoidal waveform 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 200 400 600 800 1000 1200 1400 100 110 120 130 140 150 160 170 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics SEMICONDUTORES LTDA. AEGIS A5A:870.XX 0 200 400 600 800 1000 1200 1400 2000 4000 6000 8000 10000 12000 14000 16000 18000 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 200 400 600 800 1000 1200 1400 2000 4000 6000 8000 10000 12000 14000 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s) 100 1000 10000 25ºC125ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V)

Fig. 7 - Outline Characteristics SEMICONDUTORES LTDA. AEGIS A5A:870.XX