A5A:6100.02 AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A5A:6100.XX O O O O O O O O O O O O VOLTAGE RATINGS VRSM ,V R – (V) Max. non- rep. peak reverse voltage TJ =0t o2 0 0C TJ = -40 to 0 C T J =2 5t o2 0 0C A5A:6100.02 200 200 300 A5A:6100.04 400 400 500 A5A:6100.06 600 600 700 A5A:6100.08 800 800 900 A5A:6100.10 1000 1000 1100 A5A:6100.12 1200 1200 1300 V RRM ,V R – (V) Max. rep. peak reverse voltagePart Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 200 C -40 to 200 C Max. Av. current 6100 A @ Max. T C 100 C 9580 A 63.8 50 Hz half cycle sine wave 69.5 60 Hz half cycle sine wave 75.8 50 Hz half cycle sine wave 82.6 60 Hz half cycle sine wave 18440 t = 10ms 20100 t = 8.3 ms 26055 t = 10ms 28400 t = 8.3 ms 311000 kA 2s1/2 4550 N.m kA2sI2t Max. I2t capability Initial TJ = 200 C, rated VRRM applied after surge. PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current IF(AV) NOTES 180 half sine wave Initial TJ = 200 C, no voltage applied after surge. I 2t for time tx =I 2t1/2 *t x 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - Initial TJ = 200 C, no voltage applied after surge. Initial TJ = 200 C, rated VRRM applied after surge. Initial T J = 200 C, no voltage applied after surge. kA

O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics O SEMICONDUTORES LTDA. AEGIS A5A:6100.XX CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM peak on-state voltage --- --- 1.52 V VF(TO)1 Low-level threshold --- --- 0.778 VF(TO)2 High-level threshold --- --- 0.923 rF1 Low-level resistance --- --- 0.044 rF2 High-level resistance --- --- 0.064 IRRM Peak reverse current --- 200 - mA --- --- 0.011 C/W --- --- 0.012 C/W --- --- 0.012 C/W R thCS Thermal resistance, case-to-sink --- --- 0.006 C/W wt Weight --- 1590(55.3) --- g(oz.) Case Style --- JEDEC RthJC Thermal resistance, junction-to-case TO-200AE Mtg. Surface smooth, flat and greased. Double side cooled. DC operation, double side cooled. 180 sine wave, double side coolde. 120 rectangular wave, double side cooled. V m/c87 T J = 200 C, Rated VRRM Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 19154A. Use low values for ITM < /c112rated IT(AV) TEST CONDITIONS --- --- TJ = 200 C Av. power = VT(TO) *I T(AV) +rT *[ IT(RMS)]2, 180 Half Sine. 0 1000 2000 3000 4000 5000 6000 100 110 120 130 140 150 160 170 180 190 200 *Sinusoidal waveform 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 1000 2000 3000 4000 5000 6000 7000 8000 100 110 120 130 140 150 160 170 180 190 200 *Rectangular waveform DC 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

Fig. 3 - Average Forward Power Loss Characteristics Fig. 4 - Average Forward Power Loss Characteristics Fig. 5 - Forward Voltage Drop Characteristics F i g .6-Transient Thermal Impedance ZthJC Characteristics 100 1000 10000 100000 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 1E-3 0.01 0.1 1 10 100 1E-5 1E-4 1E-3 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s) SEMICONDUTORES LTDA. AEGIS A5A:6100.XX 0 1250 2500 3750 5000 6250 7500 8750 10000 10000 20000 30000 40000 50000 60000 70000 Maximum Average Forward Power Loss *Sinusoidal waveform 180º 120º 90º 60º 30º Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 1250 2500 3750 5000 6250 7500 8750 10000 10000 20000 30000 40000 50000 60000 Maximum Average Forward Power Loss *Rectangular waveform DC 180º 120º 90º 60º 30º Maximum Average Forward Power Loss (W) Average Forward Current (A)

Fig. 7 - Outline Characteristics SEMICONDUTORES LTDA. AEGIS A5A:6100.XX