A5A:3200.24 AEGIS | Alldatasheet
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SEMICONDUTORES LTDA. AEGIS A5A:3200.XX O O O O O O O O O O O O VOLTAGE RATINGS VRSM , VR (V) Max. non- rep. peak reverse voltage TJ = 0 to 175 C TJ = -40 to 0 C TJ = 25 to 175 C A5A:3200.24 2400 2400 2500 A5A:3200.26 2600 2600 2700 A5A:3200.28 2800 2800 2900 A5A:3200.30 3000 3000 3100 A5A:3200.32 3200 3200 3300 A5A:3200.34 3400 3400 3500 A5A:3200.36 3600 3600 3700 A5A:3200.38 3800 3800 3900 A5A:3200.40 4000 4000 4100 A5A:3200.42 4200 4200 4300 VRRM , VR (V) Max. rep. peak reverse voltage Part Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 175 C -40 to 175 C Max. Av. current 3200 A @ Max. TC 100 C 5040 A 39.5 50 Hz half cycle sine wave 43.0 60 Hz half cycle sine wave 46.9 50 Hz half cycle sine wave 51.1 60 Hz half cycle sine wave 7064 t = 10ms 7700 t = 8.3 ms 9917 t = 10ms 10810 t = 8.3 ms 119000 kA2s1/2 4550 N.m PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current kA 180 half sine wave Initial TJ = 175 C, no voltage applied after surge. IF(AV) NOTES Initial TJ = 175 C, rated VRRM applied after surge. Initial TJ = 175 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA2s Initial TJ = 175 C, rated VRRM applied after surge. Initial TJ = 175 C, no voltage applied after surge.
O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics O SEMICONDUTORES LTDA. AEGIS A5A:3200.XX CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- --- 1.89 V VF(TO)1 Low-level threshold --- --- 1.186 VF(TO)2 High-level threshold --- --- 1.139 rF1 Low-level resistance --- --- 0.109 rF2 High-level resistance --- --- 0.145 IRM Peak reverse current --- --- 225 mA --- --- 0.011 C/W --- --- 0.012 C/W --- --- 0.012 C/W RthCS Thermal resistance, case-to-sink --- --- 0.006 C/W wt Weight --- 1590(56) --- g(oz.) Case Style "IR B-44" - RthJC Thermal resistance, junction-to-case V mW DC operation, double side 180 sine wave, double side 120 rectangular wave, duble side Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 10053A. Use low values for IFM < pIF(AV) TJ = 175 C. Max. Rated VRRM TEST CONDITIONS Mtg. Surface smooth, flat and greased. --- --- TJ = 175 C Av. power = VF(TO) * IF(AV) +rF * [IF(RMS)]2 0 500 1000 1500 2000 2500 3000 3500 100 110 120 130 140 150 160 170 *Sinusoidal waveform 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 500 1000 1500 2000 2500 3000 3500 4000 4500 100 110 120 130 140 150 160 170 *Rectangular waveform DC 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A)
Fig. 3 - Average Forward Power Loss Characteristics Fig. 4 - Average Forward Power Loss Characteristics Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance ZthJC Characteristics SEMICONDUTORES LTDA. AEGIS A5A:3200.XX 0 1000 2000 3000 4000 5000 10000 20000 30000 40000 50000 Maximum Average Forward Power Loss *Sinusoidal waveform 180º 120º 90º 60º 30º Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 1000 2000 3000 4000 5000 10000 20000 30000 40000 Maximum Average Forward Power Loss *Rectangular waveform DC 180º 120º 90º 60º 30º Maximum Average Forward Power Loss (W) Average Forward Current (A) 100 1000 10000 100000 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 1E-3 0.01 0.1 1 10 100 1E-5 1E-4 1E-3 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s)
“B-44” Fig. 7 - Outline Characteristics SEMICONDUTORES LTDA. AEGIS A5A:3200.XX