A5A:1650.02 AEGIS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

SEMICONDUTORES LTDA. AEGIS A5A:1650.XX O O O O O O O O O O O O VOLTAGE RATINGS VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 0 to 180 C TJ = -40 to 0 C TJ = 25 to 180 C A5A:1650.02 200 200 300 A5A:1650.04 400 400 500 A5A:1650.06 600 600 700 A5A:1650.08 800 800 900 A5A:1650.10 1000 1000 1100 A5A:1650.12 1200 1200 1300 VRRM , VR (V) Max. rep. peak reverse voltage Part Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 180 C -40 to 180 C Max. Av. current 1300 A @ Max. TC 125 C 2625 A 18.0 50 Hz half cycle sine wave 18.9 60 Hz half cycle sine wave 21.5 50 Hz half cycle sine wave 22.5 60 Hz half cycle sine wave 1630 t = 10ms 1490 t = 8.3 ms 2310 t = 10ms 2110 t = 8.3 ms 23100 kA2s1/2 1550 N.m PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current kA 180 half sine wave Initial TJ = 180 C, no voltage applied after surge. IF(AV) NOTES Initial TJ = 180 C, rated VRRM applied after surge. Initial TJ = 180 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA2s Initial TJ = 180 C, rated VRRM applied after surge. Initial TJ = 180 C, no voltage applied after surge.

O O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics SEMICONDUTORES LTDA. AEGIS A5A:1650.XX CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- 1.45 1.63 V VF(TO)1 Low-level threshold --- --- 0.794 VF(TO)2 High-level threshold --- --- 0.857 rF1 Low-level resistance --- --- 0.195 rF2 High-level resistance --- --- 0.170 IRM Peak reverse current --- 30 60 mA --- --- 0.035 C/W --- --- 0.039 C/W --- --- 0.040 C/W RthCS Thermal resistance, case-to-sink --- --- 0.015 C/W wt Weight --- 255(9) --- g(oz.) Case Style TO-200AC RthJC Thermal resistance, junction-to-case V mW DC operation, double side 180 sine wave, double side 120 rectangular wave, duble side Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 4084A. Use low values for IFM < pIF(AV) TJ = 180 C. Max. rated VRRM TEST CONDITIONS Mtg. Surface smooth, flat and greased. Double side cooled. --- --- TJ = 180 C Av. power = VF(TO) * IF(AV) +rF * [IF(RMS)]2 0 200 400 600 800 1000 1200 1400 1600 1800 100 110 120 130 140 150 160 170 180 *Sinusoidal waveform 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 500 1000 1500 2000 2500 100 110 120 130 140 150 160 170 180 *Rectangular waveform DC180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics 100 1000 10000 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s) SEMICONDUTORES LTDA. AEGIS A5A:1650.XX 0 500 1000 1500 2000 2500 5000 10000 15000 20000 25000 Maximum Average Forward Power Loss *Sinusoidal waveform 180º 120º 90º 60º 30º Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 500 1000 1500 2000 2500 5000 10000 15000 20000 Maximum Average Forward Power Loss *Rectangular waveform DC 180º 120º 90º 60º 30º Maximum Average Forward Power Loss (W) Average Forward Current (A)

Fig. 7 - Outline Characteristics SEMICONDUTORES LTDA. AEGIS A5A:1650.XX