A5A:1300.02 AEGIS | Alldatasheet

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O O O O O O O O O SEMICONDUTORES LTDA. AEGIS A5A:1300.XX VOLTAGE RATINGS VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 0 to 180 C TJ = -40 to 0 C TJ = 25 to 180 C A5A:1300.02 200 200 300 A5A:1300.04 400 400 500 A5A:1300.06 600 600 700 A5A:1300.08 800 800 900 A5A:1300.10 1000 1000 1100 A5A:1300.12 1200 1200 1300 VRRM , VR (V) Max. rep. peak reverse voltage Part Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 180 C -40 to 180 C Max. Av. current 1040 A @ Max. TC 125 C 2030 A 13.6 50 Hz half cycle sine wave 14.2 60 Hz half cycle sine wave 16.1 50 Hz half cycle sine wave 16.9 60 Hz half cycle sine wave 960 t = 10ms 1040 t = 8.3 ms 1090 t = 10ms 1190 t = 8.3 ms 13000 kA2s1/2 900 N.m Initial TJ = 180 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA2s Initial TJ = 180 C, rated VRRM applied after surge. Initial TJ = 180 C, no voltage applied after surge. NOTES Initial TJ = 180 C, rated VRRM applied after surge. kA 180 half sine wave Initial TJ = 180 C, no voltage applied after surge. IF(AV) PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current

O O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics SEMICONDUTORES LTDA. AEGIS A5A:1300.XX CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- 1.60 1.78 V VF(TO)1 Low-level threshold --- --- 0.803 VF(TO)2 High-level threshold --- --- 0.871 rF1 Low-level resistance --- --- 0.316 rF2 High-level resistance --- --- 0.279 IRM Peak reverse current --- 15 40 mA --- --- 0.038 C/W --- --- 0.045 C/W --- --- 0.046 C/W RthCS Thermal resistance, case-to-sink --- --- 0.020 C/W wt Weight --- 85(3.0) --- g(oz.) Case Style TO-200AB RthJC Thermal resistance, junction-to-case V mW DC operation, double side 180 sine wave, double side 120 rectangular wave, duble side Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 3267A. Use low values for IFM < pIF(AV) TJ = 180 C. Max. rated VRRM TEST CONDITIONS Mtg. Surface smooth, flat and greased. Single side. For double side, divide value by 2. --- --- TJ = 180 C Av. power = VF(TO) * IF(AV) +rF * [IF(RMS)]2 0 200 400 600 800 1000 1200 1400 100 110 120 130 140 150 160 170 180 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 500 1000 1500 2000 100 110 120 130 140 150 160 170 180 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics SEMICONDUTORES LTDA. AEGIS A5A:1300.XX 0 500 1000 1500 2000 5000 10000 15000 20000 25000 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 500 1000 1500 2000 2000 4000 6000 8000 10000 12000 14000 16000 18000 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 100 1000 10000 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W Time (s)

Fig. 7 - Outline Characteristics SEMICONDUTORES LTDA. AEGIS A5A:1300.XX