A5A:1100.14 AEGIS | Alldatasheet

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O O O O O O O O O SEMICONDUTORES LTDA. AEGIS A5A:1100.XX MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 175 C -40 to 175 C Max. Av. current 950 A @ Max. TC 125 C 1800 A 14.3 50 Hz half cycle sine wave 15.0 60 Hz half cycle sine wave 17.0 50 Hz half cycle sine wave 17.8 60 Hz half cycle sine wave 937 t = 10ms 1025 t = 8.3 ms 1325 t = 10ms 1450 t = 8.3 ms 14500 kA2s1/2

1250 N(Lbf)

Initial TJ = 175 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA2s Initial TJ = 175 C, rated VRRM applied after surge. Initial TJ = 175 C, no voltage applied after surge. NOTES Initial TJ = 175 C, rated VRRM applied after surge. kA 180 half sine wave Initial TJ = 175 C, no voltage applied after surge. IF(AV) PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current VOLTAGE RATINGS VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 0 to 175 C TJ = -40 to 0 C TJ = 25 to 175 C A5A:1100.14 1400 1400 1500 A5A:1100.16 1600 1520 1700 A5A:1100.18 1800 1710 1900 A5A:1100.20 2000 1900 2100 A5A:1100.22 2200 2090 2300 VRRM , VR (V) Max. rep. peak reverse voltage Part Number

O O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics SEMICONDUTORES LTDA. AEGIS A5A:1100.XX CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- 1.60 1.79 V VF(TO)1 Low-level threshold --- --- 0.788 VF(TO)2 High-level threshold --- --- 0.806 rF1 Low-level resistance --- --- 0.318 rF2 High-level resistance --- --- 0.290 IRM Peak reverse current --- 25 50 mA --- --- 0.05 C/W --- --- 0.054 C/W --- --- 0.055 C/W RthCS Thermal resistance, case-to-sink --- --- 0.015 C/W wt Weight --- 255(9) --- g(oz.) Case Style TO-200AC RthJC Thermal resistance, junction-to-case V mW DC operation, double side 180 sine wave, double side 120 rectangular wave, duble side Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 2984A. Use low values for IFM < pIF(AV) TJ = 175 C. Max. rated VRRM TEST CONDITIONS Mtg. Surface smooth, flat and greased. Single side. For double side, divide value by 2. --- --- TJ = 175 C Av. power = VF(TO) * IF(AV) +rF * [IF(RMS)]2 0 100 200 300 400 500 600 700 800 900 100011001200 100 110 120 130 140 150 160 170 *Sinusoidal waveform 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 100 110 120 130 140 150 160 170 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics SEMICONDUTORES LTDA. AEGIS A5A:1100.XX 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2000 4000 6000 8000 10000 12000 14000 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 100 1000 10000 Forward Voltage Drop 125ºC 25ºC Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s)

Fig. 7 - Outline Characteristics SEMICONDUTORES LTDA. AEGIS A5A:1100.XX