A4J:10.02B2U AEGIS | Alldatasheet
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SEMICONDUTORES LTDA. AEGIS A4J:10.XXB2U O O O O O O O O O O O O All ratings and characteristics correspond to each one of the junctions in the bridge VOLTAGE RATINGS VRSM , VR (V) Max. non- rep. peak reverse voltage TJ = 0 to 150 C TJ = -40 to 0 C TJ = 25 to 150 C A4J:10.02B2U 200 200 300 A4J:10.04B2U 400 400 500 A4J:10.06B2U 600 600 700 A4J:10.08B2U 800 800 900 A4J:10.10B2U 1000 1000 1100 A4J:10.12B2U 1200 1200 1300 VRRM , VR (V) Max. rep. peak reverse voltage Part Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -55 to 150 C -55 to 150 C Max. Av. current 10 A @ Max. TC 65 C 125 50 Hz half cycle sine wave 130 60 Hz half cycle sine wave 115 50 Hz half cycle sine wave 119 60 Hz half cycle sine wave 110 t = 10ms 100 t = 8.3 ms 78 t = 10ms 71 t = 8.3 ms
1105 A2s1/2
2.0 N.m PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current A 180 half sine wave Initial TJ = 150 C, no voltage applied after surge. IF(AV) NOTES Initial TJ = 150 C, rated VRRM applied after surge. I2t Max. I2t capability A2s Initial TJ = 150 C, rated VRRM applied after surge. Initial TJ = 150 C, no voltage applied after surge. Mounting force - Initial TJ = 150 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx1/2. (0.1 < tx < 10ms). I2t1/2 Max. I2t1/2 capability
O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - On-State Power Loss Characteristics O SEMICONDUTORES LTDA. AEGIS A4J:10.XXB2U CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- --- 1.30 V VF(TO) Threshold voltage --- --- 0.85 V rF Slope resistance --- --- 7.00 mW IRM Peak reverse current --- --- 100 mA RthJC Thermal resistance, junction-to-case --- --- 3.50 C/W wt Weight --- 7(0.25) --- g(oz.) TEST CONDITIONS --- TJ = 150 C DC operation Initial TJ = 25 C, sinusoidal wave, Ipeak =15.7A. Use low values for IFM < pIF(AV) TJ = 150 C. Max. Rated VRRM Fig. 3 - Forward Voltage Drop Characteristics Fig. 4 - Transient Thermal Impedance Characteristics 0 2 4 6 8 10 12 100 110 120 130 140 150 180º rec. 180º sin. Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 5 10 15 20 25 30 Maximum Allowable Case Temperature 180º rec. 180º sin. Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 100 1000 150ºC 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 10-3 10-2 10-1 100 101 Transient Thermal Impendance Zth-JC Transient Thermal Impendance Zth-JC (ºC/W) Time (s)
SEMICONDUTORES LTDA. AEGIS A4J:10.XXB2U Fig. 5 - Outline Characteristics