A44 HTSEMI | Alldatasheet
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Technical content
- BASE 2. COLLECTOR 3. EMITTER
FEATURES
z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage MARKING: A44 MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100µA,I E =0 500 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 400 V Emitter-base breakdown voltage V (BR)EBO I E =10µA,I C =0 6 V Collector cut-off current I CBO V CB =400V,I E =0 0.1 µA Emitter cut-off current I EBO V EB =4V,I C =0 0.1 µA h FE(1) * V CE =10V, I C =1mA 40 h FE(2) * V CE =10V, I C =10mA 50 200 h FE(3) * V CE =10V, I C =50mA 45 DC current gain h FE(4) * V CE =10V, I C =100mA 40 I C =1mA,I B =0.1mA 0.4 V I C =10mA,I B =1mA 0.5 V Collector-emitter saturation voltage V CE(sat) I C =50mA,I B =5mA 0.75 V Base-emitter saturation voltage V BE(sat) * I C =10mA,I B =1mA 0.75 V Collector output capacitance C ob V CB =20V, I E =0, f=1MHz 7 pF Emitter input capacitance C ib V BE =0.5V, I C =0, f=1MHz 130 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. Symbol Parameter Value Unit V CBO Collector-Base Voltage 500 V V CEO Collector-Emitter Voltage 400 V V EBO Emitter-Base Voltage 6 V I C Collector Current 300 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ A44 TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu