A44 HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTEC H INDUSTRIAL CO,. LTD. FE A TURES High voltage MARKING :A4 4 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO 400 V Collector-EmitterV oltage V CEO 400 V Emitter-Base V oltage V EBO 5 V Collector Current-Continuous IC 200 mA Collector Pow er Dissipation PC 625 mW Junction Temperature TJ 150 StorageTemp erature Tstg -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Param eter Symbol Test conditions Min Typ M ax Unit Collector-base breakdow n voltage V CBO IC = 100μA ,IE=0 400 V Collector-emitter breakdow n voltage V CEO IC = 1mA , IB =0 400 V Emitter-basebreakdow n voltage V EBO IE=100μA, IC =0 5 V Collector cut-off current ICBO V CB =400 V ,IE=0 0.1 μA A Collector cut-off current ICEO V CE =400 V 5 A Emittercut-offcurrent IEBO V EB = 4V , IC =0 0.1 A DC currentgain hFE (1) V CE =10V ,IC =10mA 80 300 h FE(2) V CE =10V , IC =1mA 70 h FE(3) V CE =10V , IC =100mA 40 h FE(4) V CE =10V , IC =50mA 80 Collector-emitter saturationvoltage V CE(sat) IC =10mA, IB =1mA 0.2 V V CE(sat) IC =50mA, IB =5mA 0.3 V Base-emittersatarationvoltage V BE(sat) IC =10mA, IB = 1mA 0.75 V Transition frequency fT V CE =20V , IC =10mA ,f =30MHz 50 MHz CLASSIFICA TION OF HFE Rank A B B C R ange 80-10 100-15 150-20 200-30 (N PN ) μA μA 1.EMITTER 2.BASE TO -92 3. COLLECTO A44
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTEC H INDUSTRIAL CO,. LTD. A4 4 Typical Characteristics 100 1000 11 0 1 00 100 11 0 1 00 1 10 100 0.2 0.4 0.6 0.8 1.0 11 0 1 00 100 150 200 0 5 10 15 20 25 f=1MHz I E =0 / I C T a =25 REVERSE VOLTAGE V (V) CAPACITANCE C (pF) V CB / V EB C ob / C ib C ib C ob TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) V CE =20V T a =25 I C f T T a =100 COMMON EMITTER V CE = 10V T a =25 COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE I C h FE COLLECTOR CURRENT I C (A) BASE-EMITTER SATURATION VOLTAGE V BEsat (V) T a =25 T a =100 β=10 I C V BEsat 1000 100 200 200 T a =25 T a =100 β=10 V CEsat —— I C COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (A) 200 COMMON EMITTER T a =25 80uA 72uA 64uA 56uA 48uA 40uA 32uA 24uA 16uA I B =8uA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) Static Characteristic