A42 HTSEMI | Alldatasheet
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Technical content
- BASE 2. COLLECTOR 3. EMITTER TRANSISTOR (NPN)
FEATURES
z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100µA,I E =0 310 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 305 V Emitter-base breakdown voltage V (BR)EBO I E =100µA,I C =0 5 V I CBO V CB =200V,I E =0 0.25 µA V CE =200V,I B =0 0.25 µA Collector cut-off current I CEO V CE =300V,I B =0 5 µA Emitter cut-off current I EBO V EB =5V,I C =0 0.1 µA h FE(1) V CE =10V, I C =1mA 60 h FE(2) V CE =10V, I C =10mA 80 250 DC current gain h FE(3) V CE =10V, I C =30mA 75 Collector-emitter saturation voltage V CE(sat) I C =20mA,I B =2mA 0.2 V Base-emitter saturation voltage V BE(sat) I C =20mA,I B =2mA 0.9 V Transition frequency f T V CE =20V,I C =10mA, f=30MHz 50 MHz CLASSIFICATION OF h FE RANK A B1 B2 C RANGE 80–100 100 –150 150 –200 200 –250 MARKING A42 Symbol Parameter Value Unit V CBO Collector-Base Voltage 310 V V CEO Collector-Emitter Voltage 305 V V EBO Emitter-Base Voltage 5 V I C Collector Current 500 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ A42 Date:2011/05 www.htsemi.comsemiconductor JinYu