A42 HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL C O,. LTD. FE A TURES High voltage MARKING :A42 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO 300 V Collector-EmitterV oltage V CEO 300 V Emitter-Base V oltage V EBO 5 V Collector Current-Continuous IC 500 mA Collector Pow er Dissipation PC 625 mW Junction Temperature TJ 150 StorageTemp erature Tstg -55-150 ThermalResistance, junction to Ambient R ӨJA 200 /mW Thermal Resistance, unction to Case R ӨJC 83.3 /mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Param eter Symbol Test conditions M in T yp M ax U nit Collector-base breakdow n voltage V (BR)CBO IC =100uA, IE=0 300 V Collector-emitter breakdow n voltage V (BR)CEO IC =1mA, IB =0 300 V Emitter-base breakdow n voltage V (BR)EBO IE=100μA, IC =0 5 V Collector cut-off current ICBO V CB =200V , IE=0 0.25 μA Emitter cut-offcurrent IEBO V EB =5V ,IC =0 0.1 μA DC current gain hFE(1) V CE =10V , IC =1mA 60 hFE(2) V CE =10V , IC =10mA 80 250 hFE(3) V CE =10V , IC =30mA 75 Collector-emitter saturationvoltage V CE(sat) IC =20mA, IB =2mA 0.2 V Base-emitter saturationvoltage V BE(sat) IC =20mA, IB =2mA 0.9 V Transition frequency fT V CE =20V , IC =10mA,f=30M H Z 50 MHz CLAS SIFICA TION OF HFE Rank A B 1 B 2 C R ange 80-100 100-150 150-200 200-250 (N PN ) 1.EMITTER 2.BASE TO -92 3. COLLECTO A42
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL C O,. LTD. A42 Typical Characteristics