A3L:250DT.XXH AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS O O O O O O O O O O O O O MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 125 C -40 to 150 C Max. Av. current 250 A @ Max. TC 85 C 555 A 7.16 50 Hz half cycle sine wave 7.81 60 Hz half cycle sine wave 8.17 50 Hz half cycle sine wave 8.9 60 Hz half cycle sine wave 265 t = 10ms 289 t = 8.3 ms 302 t = 10ms 329 t = 8.3 ms 3610 kA 2s1/2

500 A//c109s

3(5) N.m PGM Max. Peak gate power IF(RMS) Nom. RMS current - t p<5m s Initial TJ = 125 C, no voltage applied after surge. IFSM Max. Peak non-rep. surge current kA I2t Max. I2t capability kA 2s Initial TJ = 125 C, rated VRRM applied after surge. IF(AV) NOTES Initial TJ = 125 C, rated VRRM applied after surge. 180 half sine wave PARAMETER TJ Junction Temperature Tstg Storage Temperature Initial TJ = 125 C, no voltage applied after surge. I2t1/2 Max. I2t1/2 capability di/dt Max. Non-repetitive rate-of- rise current Initial TJ = 125 C, no voltage applied after surge. I 2t for time tx =I 2t1/2 *t x TJ = 125 C, VD =V DRM,I TM = 1600A. Gate pulse: 20V, 20/c87, 10/c109s, 0.5/c109s rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. PG(AV) Max. Av. gate power - +IGM Max. Peak gate current t p<5m s -VGM Max. Peak negative gate voltage - F Mounting Force Upper connectors(Heatsink) VOLTAGE RATINGS VRSM ,V R (V) Max. non- rep. peak reverse voltage TJ =0t o1 2 5C TJ = -40 to 0 C T J =2 5t o1 2 5C A3L:250TD.02H 200 200 300 A3L:250TD.04H 400 400 500 A3L:250TD.06H 600 600 700 A3L:250TD.08H 800 800 900 A3L:250TD.10H 1000 1000 1100 A3L:250TD.12H 1200 1200 1300 A3L:250TD.14H 1400 1330 1500 A3L:250TD.16H 1600 1520 1700 V RRM , VR (V) Max. rep. peak reverse voltagePart Number A3L:250DT.XXH

O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics O O O O O O O O O O O O SEMICONDUTORES LTDA. AEGIS CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VTM peak on-state voltage --- --- 1.37 V IL Latching current --- --- 200 mA IH Holding current --- --- 500 mA td Delay time --- 0.7 1.5 /c109s tq Turn-off time --- 125 200 /c109s 80 140 --- --- --- 1000 IRM,I DM Peak reverse and off- state current --- 10 50 mA 50 80 150 TC =2 5C 2 --- 2.5 TC =2 5C VGD DC gate voltage not to trigger --- --- 0.3 V --- --- 0.07 C/W --- --- 0.071 C/W --- --- 0.075 C/W R thCS Thermal resistance, case-to-sink --- --- 0.02 C/W wt Weight --- 500(18) --- g(oz.) Case Style IR Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 785A. Use low values for ITM < /c112rated IT(AV) TEST CONDITIONS --- TJ = 125 C Av. power = VT(TO) *I T(AV) +rT *[ IT(RMS)]2, 180 Half Sine. TC = 125 C, 12V anode. Gate pulse: 10V, 20/c87, 100/c109s. Higher dv/dt values avaliable. TJ = 125 C. Exp. to 100% or lin. To 80% VDRM, gate open. TJ = 125 C, Exp. To 67% VDRM, gate open. RthJC Thermal resistance, junction-to-case TJ = 125 C, ITM = 500A, di/dt = 25A//c109s, VR = 50V. dv/dt = 20 V//c109s lin. to rated VDRM. Gate: 0V, 100/c87. V m/c87 TC = 25 C, 12V anode. Initial IT = 15A. TC =2 5C ,V D =V DRM, 50A resistive load. Gate pulse: 10V, 20/c87,1 0/c109s, 1/c109s rise time. TJ = 125 C, Rated VRRM and VDRM, gate open. +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. dv/dt Critical rate-of-rise of off-state voltage IGT DC gate current to trigger ---"Magn-A-Pak" V//c109s mA V Mtg. Surface smooth, flat and greased. Single side cooled. TC = 25 C, Max. Value which will not trigger with rated VDRM anode. DC operation, single side cooled. 180 sine wave, single side cooled. 0.61 120 rectangular wave, single side cooled. VT(TO) Threshold voltage --- --- 0.89 rT Slope resistance --- --- VGT DC gate voltage to trigger 0 50 100 150 200 250 300 350 400 100 110 120 *Sinusoidal Waveform 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 50 100 150 200 250 300 350 400 450 500 100 110 120 *Rectangular Waveform DC180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) A3L:250DT.XXH

Fig. 5 - Forward Voltage Drop Characteristics F i g .6-Transient Thermal Impedance Fig.3 -Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics SEMICONDUTORES LTDA. AEGIS 0 100 200 300 400 500 600 500 1000 1500 2000 2500 3000 3500 *Sinusoidal Waveform 180º 120º 90º 60º 30º Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 100 200 300 400 500 600 500 1000 1500 2000 2500 3000 *Rectangular Waveform DC 180º 120º 90º 60º 30º Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 012345 100 1000 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 0.01 0.1 1 10 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC Time (s) A3L:250DT.XXH

Fig. 8 - Outline Characteristics Fig. 7 - Gate Trigger Characteristics SEMICONDUTORES LTDA. AEGIS A3L:250DT.XXH Fig. 9 - Circuit Layout ~ +- 1 2 3 G2K1 K2