A3L:250DD.02

A3L:250DD.XX AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A3L:250DD.XX O O O O O O O O O O O O VOLTAGE RATINGS VRSM ,V R (V) Max. non-rep. peak reverse voltage TJ =0t o1 5 0C T J = -40 to 0 C T J =2 5t o1 5 0C A3L:250DD.02 200 200 300 A3L:250DD.04 400 400 500 A3L:250DD.06 600 600 700 A3L:250DD.08 800 800 900 A3L:250DD.10 1000 1000 1100 A3L:250DD.12 1200 1200 1300 A3L:250DD.14 1400 1400 1500 A3L:250DD.16 1600 1520 1700 V RRM ,V R (V) Max. rep. peak reverse voltagePart Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 150 C -40 to 150 C Max. Av. current 250 A @ Max. TC 85 C 392 A 8.43 50 Hz half cycle sine wave 9.18 60 Hz half cycle sine wave 9.61 50 Hz half cycle sine wave 10.47 60 Hz half cycle sine wave 367 t = 10ms 400 t = 8.3 ms 418 t = 10ms 456 t = 8.3 ms 5000 kA 2s1/2 5 N.m Initial TJ = 150 C, no voltage applied after surge. I2t for time tx =I 2t1/2 *t x 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA 2s Initial TJ = 150 C, rated VRRM applied after surge. Initial TJ = 150 C, no voltage applied after surge. NOTES Initial TJ = 150 C, rated VRRM applied after surge. kA 180 half sine wave Initial TJ = 150 C, no voltage applied after surge. IF(AV) PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current

O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics O O O SEMICONDUTORES LTDA. AEGIS A3L:250DD.XX CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- --- 1.31 V VF(TO)1 Low-level threshold --- --- 0.77 VF(TO)2 High-level threshold --- --- 0.86 rF1 Low-level resistance --- --- 0.48 rF2 High-level resistance --- --- 0.32 IRM Peak reverse current --- --- 50 mA --- --- 0.07 C/W --- --- 0.075 C/W --- --- 0.076 C/W R thCS Thermal resistance, case-to-sink --- --- 0.02 C/W wt Weight --- 500(18) --- g(oz.) Case Style Modified "Magn-A-Pak" IR Mtg. Surface smooth, flat and greased. --- --- TJ = 150 C Av. power = VF(TO) *I F(AV) +rF *[ IF(RMS)]2 IFM =pxI F(AV),T J =2 5C ,t p= 400/c109s square wave. Use low values for IFM < /c112IF(AV) TJ = 150 C. Max. rated VRRM TEST CONDITIONS RthJC Thermal resistance, junction-to-case V m/c87 Per junction, DC operation. 180 sine wave, double side 120 rectangular wave 0 50 100 150 200 250 100 110 120 130 140 150 *Sinusoidal Waveform 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 50 100 150 200 250 300 350 400 450 100 110 120 130 140 150 *Rectangular Waveform DC 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

Fig. 5 - Forward Voltage Drop Characteristics F i g .6-Transient Thermal Impedance Fig.3 -Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics SEMICONDUTORES LTDA. AEGIS A3L:250DD.XX 0 50 100 150 200 250 300 350 400 450 250 500 750 1000 1250 1500 *Sinusoidal Waveform 180º 120º 90º 60º 30º Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 50 100 150 200 250 300 350 400 450 250 500 750 1000 1250 *Rectangular Waveform DC 180º 120º 90º 60º 30º Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0.01 0.1 1 10 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC Time (s) 100 1000 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V)

Fig. 7 - Outline Characteristics SEMICONDUTORES LTDA. AEGIS A3L:250DD.XX Fig. 8 - Circuit Layout ~1 ~2 ~3