A1N:50.XXJ AEGIS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

SEMICONDUTORES LTDA. AEGIS A1N:50.XXJ O O O O O O O O O O O O This datasheet applies to: Metric thread: A1N:50.XXJ Inch thread: A2N:50.XXJ O VOLTAGE RATINGS VRSM , VR (V) Max. non- rep. peak reverse voltage TJ = 0 to 125 C TJ = -40 to 0 C TJ = 25 to 125 C A1N:50.02J 200 200 300 A1N:50.04J 400 400 500 A1N:50.06J 600 600 700 A1N:50.08J 800 800 900 A1N:50.10J 1000 1000 1100 A1N:50.12J 1200 1200 1300 A1N:50.14J 1400 1330 1500 A1N:50.16J 1600 1520 1700 VRRM , VR (V) Max. rep. peak reverse voltage Part Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 125 C -40 to 150 C Max. Av. current 50 A @ Max. TC 85 C 80 A 1.18 50 Hz half cycle sine wave 1.29 60 Hz half cycle sine wave 1.37 50 Hz half cycle sine wave 1.49 60 Hz half cycle sine wave 6.05 t = 10ms 6.59 t = 8.3 ms 8.53 t = 10ms 9.30 t = 8.3 ms 102 kA2s1/2

150 A/ms

2.8(25) N.m(Lbf.in) -VGM Max. Peak negative gate voltage - F Mounting Force Non lubricated threads PG(AV) Max. Av. gate power - +IGM Max. Peak gate current tp < 5 ms I2t1/2 Max. I2t1/2 capability di/dt Max. Non-repetitive rate-of- rise current Initial TJ = 125 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx TJ = 125 C, VD = VDRM, ITM = 1600A. Gate pulse: 20V, 20W, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. I2t Max. I2t capability kA2s Initial TJ = 125 C, rated VRRM applied after surge. Initial TJ = 125 C, no voltage applied after surge. kA PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) NOTES Initial TJ = 125 C, rated VRRM applied after surge. 180 half sine wave PGM Max. Peak gate power IF(RMS) Nom. RMS current - tp < 5 ms Initial TJ = 125 C, no voltage applied after surge. IFSM Max. Peak non-rep. surge current

O O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics O O O O O O O O O O O SEMICONDUTORES LTDA. AEGIS A1N:50.XXJ 0 10 20 30 40 50 100 105 110 115 120 125 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 10 20 30 40 50 60 70 100 105 110 115 120 125 DC180º 120º 90º 60º 30º *Rectangular waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VTM peak on-state voltage --- --- 1.68 V IL Latching current --- --- 400 mA IH Holding current --- --- 200 mA td Delay time --- 0.7 0.9 ms tq Turn-off time --- --- 110 ms dv/dt Critical rate-of-rise of off-state voltage --- --- 500 V/ms IRM, IDM Peak reverse and off- state current --- 10 15 mA 50 80 150 TC = 25 C VGD DC gate voltage not to trigger --- --- 0.2 V --- --- 0.35 C/W --- --- 0.41 C/W --- --- 0.46 C/W RthCS Thermal resistance, case-to-sink --- --- 0.25 C/W wt Weight --- 28(1) --- g(oz.) Case Style JEDEC Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 79A. Use low values for ITM < p rated IT(AV) TEST CONDITIONS --- TJ = 125 C Av. power = VT(TO) * IT(AV) +rT * [IT(RMS)]2, 180 Half Sine. TC = 125 C, 12V anode. Gate pulse: 10V, 20W, 100ms. TJ = 125 C, Exp. To 67% V DRM, gate open. RthJC Thermal resistance, junction-to-case TJ = 125 C, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated VDRM. Gate: 0V, 100W. V mW TC = 25 C, 12V anode. Initial IT = 15A. TC = 25 C, VD = VDRM, 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. TJ = 125 C, Rated VRRM and VDRM, gate open. +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. IGT DC gate current to trigger ---TO-208AC(TO-65) mA V Mtg. Surface smooth, flat and greased. Single side cooled. TC = 25 C, Max. Value which will not trigger with rated VDRM anode. DC operation, single side cooled. 180 sine wave, single side cooled. 4.6 120 rectangular wave, single side cooled. VT(TO) Threshold voltage --- --- 0.85 rT Slope resistance --- --- VGT DC gate voltage to trigger

Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics SEMICONDUTORES LTDA. AEGIS A1N:50.XXJ 0 10 20 30 40 50 60 70 80 100 150 200 250 300 350 400 450 500 550 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 10 20 30 40 50 60 70 80 100 150 200 250 300 350 400 450 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 100 1000 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 10-3 10-2 10-1 100 101 10-2 10-1 100 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s)

1/4" UNF 2A Fig. 7 - Gate Trigger Characteristics TO-208AC (TO-65) SEMICONDUTORES LTDA. AEGIS A1N:50.XXJ Fig. 8 - Outline Characteristics