A1F:230.10HY

A1F:230.02HY AEGIS | Alldatasheet

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SEMICONDUTORES L TDA. AEGIS A1F:230.XXHY O O O O O O O O O O O O O MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 125 C -40 to 150 C Max. Av. current 230 A @ Max. T C 85 C 364 A 8.5 50 Hz half cycle sine wave 9.2 60 Hz half cycle sine wave 9.6 50 Hz half cycle sine wave 10.5 60 Hz half cycle sine wave 274 t = 10ms 298 t = 8.3 ms 312 t = 10ms 340 t = 8.3 ms 5250 kA 2s1/2

800 A//c109s

50 N.m Initial TJ = 125 C, no voltage applied after surge. I 2t for time tx =I 2t1/2 *t x 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - Non lubricated threads I2t Max. I2t capability kA 2s Initial TJ = 125 C, rated VRRM applied after surge. Initial TJ = 125 C, no voltage applied after surge. NOTES Initial TJ = 125 C, rated VRRM applied after surge. kA 180 half sine wave Initial TJ = 125 C, no voltage applied after surge. IF(AV) PARAMETER TJ Junction Temperature Tstg Storage Temperature di/dt Max. Non-repetitive rate-of- rise current IFSM Max. Peak non-rep. surge current TJ = 125 C, VD =V DRM,I TM = 722A. Gate pulse: 20V, 20/c87, 10/c109s, 0.5/c109s rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. PGM Max. Peak gate power t p<5m s PG(AV) Max. Av. gate power VOLTAGE RATINGS VRSM ,V R – (V) Max. non- rep. peak reverse voltage TJ =0t o1 2 5C TJ = -40 to 0 C T J =2 5t o1 2 5C A1F:230.02HY 200 200 300 A1F:230.04HY 400 400 500 A1F:230.06HY 600 600 700 A1F:230.08HY 800 800 900 A1F:230.10HY 1000 1000 1100 A1F:230.12HY 1200 1200 1300 A1F:230.14HY 1400 1400 1500 A1F:230.16HY 1600 1600 1700 V RRM , VR – (V) Max. rep. peak reverse voltagePart Number

SEMICONDUTORES L TDA. AEGIS O O O O O O O O O O O O O O O O O O O O O Fig. 2 - Current Ratings CharacteristicsFig. 1 - Current Ratings Characteristics A1F:230.XXHY 0 50 100 150 200 100 110 120 180º 120º 90º 60º 30º Maximum Allowable Case Temperature *Sinusoidal waveform Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 50 100 150 200 250 300 100 110 120 DC180º 120º 90º 60º 30º Maximum Allowable Case Temperature *Rectangular waveform Maximum Allowable Case Temperature (ºC) Average Forward Current (A) CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VTM peak on-state voltage --- 1.80 1.92 V IL Latching current --- 270 --- mA IH Holding current --- 100 500 mA td Delay time --- 0.78 --- /c109s tq Turn-off time --- --- 15-60 /c109s IRM(REC) Recovery current --- 90 --- A 500 700 --- 1000 --- --- IRM,I DM Peak reverse and off- state current --- 50 --- mA VGD DC gate voltage not to trigger --- --- 0.3 V --- --- 0.095 C/W --- --- 0.1 C/W --- --- 0.103 C/W R thCS Thermal resistance, case-to-sink --- --- 0.04 C/W wt Weight --- 510(18) --- g(oz.) Case Style JEDEC --- --- TJ = 125 C Av. power = VT(TO) *I T(AV) +rT *[ IT(RMS)]2 TC = 25 C, 12V anode. Gate pulse: 10V, 20/c87, 100/c109s. Higher dv/dt values avaliable. TJ = 125 C. Exp. to 100% or lin. To 80% VDRM, gate open. TJ = 125 C, Exp. To 67% VDRM, gate open. TJ = 125 C, ITM = 500A, di/dt = 25A//c109s, VR = 50V. dv/dt = 200 V//c109s lin. To 80% rated VDRM. Gate: 0V, 100/c87. TJ = 125 C, ITM = 722A, diR/dt = 50A//c109s. Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 722A. Use low values for ITM < /c112rated IT(AV) TEST CONDITIONS V m/c87 TC = 25 C, 12V anode. Initial IT = 10A. TC =2 5C ,V D = rated VDRM, 50A resistive load. Gate pulse: 10V, 20/c87,1 0/c109s, 1/c109s rise time. 120 rectangular wave, single side cooled. dv/dt Critical rate-of-rise of off- state voltage IGT DC gate current to trigger VGT DC gate voltage to trigger RthJC Thermal resistance, junction-to-case TO-209AE(TO-118) TJ = 125 C, Rated VRRM and VDRM, gate open. +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. V//c109s mA V Mtg. Surface smooth, flat and greased. TC = 25 C, Max. Value which will not trigger with rated VDRM anode-to-cathode. DC operation. 180 sine wave, single side cooled.

SEMICONDUTORES L TDA. AEGIS Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics Fig. 7 - Frequency Characteristics Fig. 8 - Frequency Characteristics Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics A1F:230.XXHY 0 50 100 150 200 250 300 350 250 500 750 1000 1250 1500 1750 2000 2250 2500 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 50 100 150 200 250 300 350 250 500 750 1000 1250 1500 1750 2000 2250 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 100 1000 125º 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s) 1E-5 1E-4 1E-3 0.01 100 1000 10000 15 kHz 10 kHz 5k H z 2k H z 1k H z *Sinusoidal pulse Tc = 60ºC 50 Hz 500 Hz 200 Hz 100 Hz Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s) 1E-4 1E-3 0.01 100 1000 10000 15 kHz 10 kHz 5k H z 2k H z 1k H z 50 Hz 100 Hz 200 Hz 500 Hz *Rectangular pulse Tc = 60ºC Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s)

SEMICONDUTORES L TDA. AEGIS Fig. 9 - Frequency Characteristics Fig. 10 - Frequency Characteristics Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Fig. 13 - Frequency Characteristics Fig. 14 - Frequency Characteristics A1F:230.XXHY 1E-4 1E-3 0.01 100 1000 10000 15 kHz 10 kHz 5k H z 2k H z 1k H z 500 Hz 200 Hz 100 Hz 50 Hz *Sinusoidal Pulse Tc =8 0 º C Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s) 1E-4 1E-3 0.01 100 1000 10000 10 kHz *Rectangular Pulse Tc = 80ºC 50 Hz 100 Hz 200 Hz 500 Hz 1k H z 2k H z 5k H z Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s) 1E-4 1E-3 0.01 100 1000 10000 15 kHz *Sinusoidal pulse Tc =1 0 0 º C Frequency Characteristic 50 Hz 100 Hz 200 Hz 500 Hz 1k H z 2k H z 5k H z10 kHz Peak On-State (A) Pulse Basewidth (/c63s) 100 1000 10000 5k H z 50 Hz 100 Hz 200 Hz 500 Hz 1k H z 2k H z *Rectangular pulse Tc = 100ºC Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s) 100 1000 10 J *Sinusoidal pulse Maximu On-State Energy Power Loss 0.5 J 0.2 J0.1 J 0.05 J 0.02 J0.01 J Peak On-State Current (A) Pulse Basewidth (/c63s) 1E-3 0.01 100 1000 20 J 10 J *Rectangular pulse Maximu On-State Energy Power Loss 2J1J 0.5 J 0.2 J 0.1 J 0.05 J 0.02 J 0.01 J Peak On-State Current (A) Pulse Basewidth (/c63s)

M24 x 1.5 SEMICONDUTORES L TDA. AEGIS Fig. 15 - Gate Trigger Characteristics TO-209AE (TO-118) Fig. 16 - Outline Characteristics A1F:230.XXHY 1E-3 0.01 0.1 1 10 100 0.1 100 TJ= -40ºC TJ= 25ºC TJ= 125ºC Rectangular gate pulse a) Recommended load line for rated didt: 20V, 10/c63;t r<=1/c63s b) Recommended load line for <=30% rated di/dt: 10V, 10/c63;t r<=1/c63s (b) (a) Frequency Limited by PG(Av.) IGD VGD (4)(3)(2)(1) (1) PGM= 10W, tp = 20ms (2) PGM= 20W, tp = 10ms (3) PGM= 40W, tp =5 m s (4) PGM= 60W, tp =3 . 3 m s Gate Characteristics Instantaneous Gate Voltage (V) Instantaneous Gate Current (A)