A1C240S.02.05

A1C:240S.02.05 AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A1C:240S.XX.05 O O O O O O O O O O O O This datasheet applies to: Metric thread: A1C: 0S.XX.05, Inch thread: A2C: 0S.XX.05, A1D:240S.XX.05 A2D:240S.XX.05 O O VOLTAGE RATINGS VRSM ,V R – (V) Max. non- rep. peak reverse voltage T J=0t o1 5 0C T J=- 4 0t o0C T J=2 5t o1 5 0C A1C:240S.02.05 200 200 300 A1C:240S.04.05 400 400 500 A1C:240S.06.05 600 600 700 A1C:240S.08.05 800 800 900 A1C:240S.10.05 1000 1000 1100 A1C:240S.12.05 1200 1200 1300 V RRM , VR – (V) Max. rep. peak reverse voltagePart Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 150 C -40 to 150 C Max. Av. current 240 A @ Max. T C 100 C 380 A 5.75 50 Hz half cycle sine wave 6.27 60 Hz half cycle sine wave 6.56 50 Hz half cycle sine wave 7.15 60 Hz half cycle sine wave 171.00 t = 10ms 187 t = 8.3 ms 195 t = 10ms 213.00 t = 8.3 ms 2340 A 2s1/2 1m A 25 A 240 A

50 A//c109s

30 N.m TJ =2 5C ,V D =V DRM,I FM = 240A. TJ =2 5C kA PARAMETER TJ Junction Temperature Tstg Storage Temperature di/dt Max. Non-repetitive rate-of- rise current IFSM Max. Peak non-rep. surge current IRM Peak reverse recovery current IFM Peak forward current IF(AV) IF(RMS) Nom. RMS current NOTES Initial TJ = 125 C, rated VRRM applied after surge. Initial TJ = 125 C, no voltage applied after surge. I 2t for time tx =I 2t1/2 * tx1/2. (0.1 < tx < 10ms). 180 half sine wave Initial TJ = 125 C, no voltage applied after surge. I2t Max. I2t capability kA 2s Initial TJ = 125 C, rated VRRM applied after surge. Initial TJ = 125 C, no voltage applied after surge. IRRM Maximum peak reverse current at rated VRRM. I2t1/2 Max. I2t1/2 capability F Mounting Force

O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics O O O AEGIS Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM peak on-state voltage --- --- 1.75 V VF(TO) Threshold voltage --- --- 0.8 V rF Slope resistance --- --- 1.15 m/c87 --- --- 1000 --- --- 2000 RthJC Thermal resistance, junction-to-case --- --- 0.2 C/W RthCS Thermal resistance, case-to-sink --- --- 0.03 C/W wt Weight --- 250(8.75) --- g(oz.) Case Style --- JEDEC trr Maximum reverse recovery time ns DO-205AB (DO-9) Mtg. Surface smooth, flat and greased. Single side cooled. DC operation TEST CONDITIONS --- --- TJ = 150 C TJ =2 5C ,I F =1 At oV R = 30V, -dIF/dt = 25A//c109s TJ =2 5C ,- d IF/dt = 25A//c109s, IFM = /c112x rated IF(Av.). Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 754A. A1C:240S.XX.05 0 50 100 150 200 250 100 110 120 130 140 150 180º 120º 90º 60º 30º Maximum Allowable Case Temperature *Sinusoidal waveform Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 50 100 150 200 250 300 350 100 110 120 130 140 150 DC 180º 120º 90º60º 30º Maximum Allowable Case Temperature *Rectangular waveform Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 50 100 150 200 250 300 350 400 1000 2000 3000 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 50 100 150 200 250 300 350 400 500 1000 1500 2000 2500 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) SEMICONDUTORES LTDA.

Fig. 5 - Forward Voltage Drop Characteristics F i g .6-Transient Thermal Impedance Characteristics AEGIS Fig. 7 - Frequency Characteristics Fig. 8 - Frequency Characteristics Fig. 9 - Frequency Characteristics Fig. 10 - Frequency Characteristics A1C:240S.XX.05 100 1000 Forward Voltage Drop 125ºC 25ºC Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) 1E-3 0.01 0.1 1 10 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s) 1000 2000 3000 4000 5000 6000 7000 20 kHz *Sinusoidal pulse Tc = 60ºC 50 Hz 10 kHz 5k H z 2k H z 1k H z 500 Hz 200 Hz 100 Hz Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s) 1000 20 kHz 2k H z 50 Hz 100 Hz 200 Hz 500 Hz 1k H z 5k H z 10 kHz *Rectangular pulse Tc =6 0 º C Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s) 1000 2000 3000 4000 5000 6000 7000 20 kHz 10 kHz 5k H z 2k H z 1k H z 500 Hz 200 Hz 100 Hz 50 Hz *Sinusoidal Pulse Tc =8 0 º C Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s) 1000 *Rectangular Pulse Tc = 80ºC 50 Hz 100 Hz 200 Hz 500 Hz 1k H z 2k H z 5k H z 10 kHz 20 kHz Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s) SEMICONDUTORES LTDA.

Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Fig. 13 - Maximum On-State Power Loss Characteristics Fig. 14 - Maximum On-State Power Loss Characteristics DO-205AB(DO-9) Fig. 15 - Outline Characteristics A1C:240S.XX.05 1000 2000 3000 4000 5000 6000 7000 *Sinusoidal pulse Tc = 100ºC Frequency Characteristic 50 Hz 100 Hz 200 Hz 500 Hz 1k H z 2k H z 5k H z 10 kHz 20 kHz Peak On-State (A) Pulse Basewidth (/c63s) 1000 50 Hz 100 Hz 200 Hz 500 Hz 1k H z 2k H z 5k H z 10 kHz 20 kHz *Rectangular pulse Tc = 100ºC Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c63s) 100 1000 10 J *Sinusoidal pulse Maximum On-State Energy Power Loss 1J0.5 J0.2 J0.1 J0.05 J 0.02 J0.01 J Peak On-State Current (A) Pulse Basewidth (/c63s) 100 1000 10 J *Rectangular pulse Maximum On-State Energy Power Loss 0.5 J 0.2 J0.1 J0.05 J0.02 J 0.01 J Peak On-State Current (A) Pulse Basewidth (/c63s) M16 x 1.5 3/4 UNF 2A SW32 SEMICONDUTORES LTDA.