A1C:20S.02.10 AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A1C:20S.XX.10 O O O O O O O O O O O O This datasheet applies to: Metric thread: A1C:20S.XX.10, Inch thread: A2C:20S.XX.10, A1D:20S.XX.10 A2D:20S.XX.10 O O VOLTAGE RATINGS VRSM ,V R (V) Max. non- rep. peak reverse voltage T J=0t o1 5 0C T J=- 4 0t o0C T J=2 5t o1 5 0C A1C:20S.02.10 200 200 300 A1C:20S.04.10 400 400 500 A1C:20S.06.10 600 600 700 A1C:20S.08.10 800 800 900 A1C:20S.10.10 1000 1000 1100 A1C:20S.12.10 1200 1200 1300 A1C:20S.14.10 1400 1400 1500 A1C:20S.16.10 1600 1600 1700 V RRM , VR (V) Max. rep. peak reverse voltagePart Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 150 C -40 to 150 C Max. Av. current 20 A @ Max. TC 100 C 30 A 0.34 50 Hz half cycle sine wave 0.37 60 Hz half cycle sine wave 0.39 50 Hz half cycle sine wave 0.42 60 Hz half cycle sine wave 0.66 t = 10ms 0.72 t = 8.3 ms 0.75 t = 10ms 0.82 t = 8.3 ms 9.2 A 2s1/2 0.1 mA 25 A 20 A

25 A//c109s

2 N.m - I2t Max. I2t capability kA 2s Initial TJ = 125 C, rated VRRM applied after surge. Initial TJ = 125 C, no voltage applied after surge. IRRM Maximum peak reverse current at rated VRRM. I2t1/2 Max. I2t1/2 capability F Mounting Force NOTES Initial TJ = 125 C, rated VRRM applied after surge. Initial TJ = 125 C, no voltage applied after surge. I 2t for time tx =I 2t1/2 * tx1/2. (0.1 < tx < 10ms). 180 half sine wave Initial TJ = 125 C, no voltage applied after surge. PARAMETER TJ Junction Temperature Tstg Storage Temperature di/dt Max. Non-repetitive rate-of- rise current IFSM Max. Peak non-rep. surge current IRM Peak reverse recovery current IFM Peak forward current IF(AV) IF(RMS) Nom. RMS current TJ =2 5C ,V D =V DRM,I FM = 20A. TJ =2 5C kA

O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics O O O AEGIS Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics A1C:20S.XX.10 CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM peak on-state voltage --- --- 1.55 V VF(TO) Threshold voltage --- --- 1.18 V rF Slope resistance --- --- 7 m /c87 --- --- 1000 --- --- 2000 R thJC Thermal resistance, junction-to-case --- --- 2 C/W RthCS Thermal resistance, case-to-sink --- --- 1 C/W wt Weight --- 7(.25) --- g(oz.) Case Style --- JEDEC TEST CONDITIONS --- --- TJ = 150 C TJ =2 5C ,I F =1 At oV R = 30V, -dIF/dt = 25A//c109s TJ =2 5C ,- d IF/dt = 25A//c109s, IFM = /c112x rated IF(Av.). Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 63A. trr Maximum reverse recovery time ns DO-203AA (DO-4) Mtg. Surface smooth, flat and greased. Single side cooled. DC operation 0 2 4 6 8 10 12 14 16 100 110 120 130 140 150 180º 120º 90º 60º 30º Maximum Allowable Case Temperature *Sinusoidal waveform Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 5 10 15 20 25 100 110 120 130 140 150 DC 180º 120º 90º 60º 30º Maximum Allowable Case Temperature *Rectangular waveform Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 5 10 15 20 25 100 120 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 5 10 15 20 25 100 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A)

Fig. 5 - Forward Voltage Drop Characteristics F i g .6-Transient Thermal Impedance Characteristics AEGIS 1E-3 0.01 0.1 1 10 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s) Fig. 7 - Frequency Characteristics Fig. 8 - Frequency Characteristics Fig. 9 - Frequency Characteristics Fig. 10 - Frequency Characteristics A1C:20S.XX.10 1x10 1x10 1x10 100 1000 *Sinusoidal pulse Tc =6 0 º C 50 Hz 2k H z 1k H z 500 Hz 200 Hz 100 Hz Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c109s) 1x10 1x10 1x10 100 1000 2k H z 50 Hz 100 Hz 200 Hz 500 Hz 1k H z *Rectangular pulse Tc = 60ºC Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c109s) 1x10 1x10 100 1000 2k H z 1k H z 500 Hz 200 Hz 100 Hz 50 Hz *Sinusoidal Pulse Tc = 80ºC Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c109s) 1x10 1x10 1x10 100 1000 *Rectangular Pulse Tc = 80ºC 50 Hz 100 Hz 200 Hz 500 Hz 1k H z Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c109s) 150ºC 25ºC Forward Voltage Drop Instantaneous Forward Voltage (V) Instantaneous Forward Current (A)

Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Fig. 13 - Maximum On-State Power Loss Characteristics Fig. 14 - Maximum On-State Power Loss Characteristics DO-203AA (DO-4) Fig. 15 - Outline Characteristics A1C:20S.XX.10 1x10 1x10 100 1000 *Sinusoidal pulse Tc = 100ºC Frequency Characteristic 50 Hz 100 Hz 200 Hz 500 Hz 1k H z 2k H z Peak On-State (A) Pulse Basewidth (/c109s) 1x10 1x10 100 1000 50 Hz 100 Hz 200 Hz 500 Hz 1k H z *Rectangular pulse Tc = 100ºC Frequency Characteristics Peak On-State Current (A) Pulse Basewidth (/c109s) 1x10 1x10 100 *Sinusoidal pulse Maximum On-State Energy Power Loss 1J0.5 J0.2 J0.1 J0.05 J 0.02 J0.01 J Peak On-State Current (A) Pulse Basewidth (/c109s) 1x10 1x10 100 *Rectangular pulse Maximum On-State Energy Power Loss 0.5 J 0.2 J 0.1 J0.05 J0.02 J 0.01 J Peak On-State Current (A) Pulse Basewidth (/c109s)