A1A460.02

A1A:460.02 AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A1A:460.XX O O O O O O O O O O O O This datasheet applies to: Metric thread: A1A:460.XX, A1B:460.XX Inch thread: A2A:460.XX, A2B:460.XX MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 180 C -40 to 180 C Max. Av. current 460 A @ Max. TC 125 C 940 A 10900 50 Hz half cycle sine wave 11450 60 Hz half cycle sine wave 13000 50 Hz half cycle sine wave 13600 60 Hz half cycle sine wave 598 t = 10ms 546 t = 8.3 ms 845 t = 10ms 772 t = 8.3 ms 8450 kA 2s1/2 60(534) N.m(Lbf.in) Initial TJ = 180 C, no voltage applied after surge. I2t for time tx =I 2t1/2 *t x 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA 2s Initial TJ = 180 C, rated VRRM applied after surge. Initial TJ = 180 C, no voltage applied after surge. NOTES Initial TJ = 180 C, rated VRRM applied after surge. A 180 half sine wave Initial TJ = 180 C, no voltage applied after surge. IF(AV) PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current VOLTAGE RATINGS VRSM ,V R – (V) Max. non- rep. peak reverse voltage TJ =0t o1 8 0C TJ = -40 to 0 C T J =2 5t o1 8 0C A1A:460.02 200 200 300 A1A:460.04 400 400 500 A1A:460.06 600 600 700 A1A:460.08 800 800 900 A1A:460.10 1000 1000 1100 A1A:460.12 1200 1200 1300 A1A:460.14 1400 1400 1500 A1A:460.16 1600 1600 1700 V RRM ,V R – (V) Max. rep. peak reverse voltagePart Number

O O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics SEMICONDUTORES LTDA. AEGIS A1A:460.XX 0 100 200 300 400 500 600 100 110 120 130 140 150 160 170 180 *Sinusoidal waveform 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 200 400 600 800 1000 100 110 120 130 140 150 160 170 180 *Rectangular waveform DC 180º 120º 90º 60º 30º Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- --- 1.42 V VF(TO)1 Low-level threshold --- --- 0.78 VF(TO)2 High-level threshold --- --- 0.87 rF1 Low-level resistance --- --- 0.35 rF2 High-level resistance --- --- 0.31 IRM Peak reverse current --- --- 40 mA --- --- 0.15 C/W --- --- 0.17 C/W --- --- 0.19 C/W RthCS Thermal resistance, case-to-sink --- --- 0.015 C/W wt Weight --- 500(17.5) --- g(oz.) Case Style DO-205AD(DO-13) --- --- V m/c87Use low values for IFM < /c112IF(AV) TJ = 180 C RthJC Thermal resistance, junction-to-case 180 sine wave 120 rectangular wave Mtg. Surface smooth, flat and greased. Single side. DC operation Initial TJ = 25 C, 50-60Hz half sine, Ipeak = 1445A. Av. power = VF(TO) *I F(AV) +rF *[ IF(RMS)]2 TEST CONDITIONS TJ = 180 C. Max. rated VRRM

Fig. 5 - Forward Voltage Drop Characteristics F i g .6-Transient Thermal Impedance Characteristics Fig. 3 - On-State Power Loss Characteristics Fig . 4 - On-State Power Loss Characteristics SEMICONDUTORES LTDA. AEGIS A1A:460.XX 0 200 400 600 800 1000 1000 2000 3000 4000 5000 6000 *Sinusoidal waveform 180º 120º 90º 60º 30º Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 200 400 600 800 1000 1000 2000 3000 4000 5000 *Rectangular waveform DC 180º 120º 90º 60º 30º Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s) 100 1000 10000 125ºC 25ºC Forward Voltage Drop Instantaneous Forward Voltage (V) Instantaneous Forward Current (A)

M24 x 1.5 DO-205AD (DO-13) Fig. 7 - Outline Characteristics SEMICONDUTORES LTDA. AEGIS A1A:460.XX