A1A:50.02 AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A1A:50.XX O O O O O O O O O O O O VOLTAGE RATINGS VRSM , VR (V) Max. non- rep. peak reverse voltage TJ = 0 to 180 C TJ = -40 to 0 C TJ = 25 to 180 C A1A:50.02 200 200 300 A1A:50.04 400 400 500 A1A:50.06 600 600 700 A1A:50.08 800 800 900 A1A:50.10 1000 1000 1100 A1A:50.12 1200 1200 1300 A1A:50.14 1400 1400 1500 A1A:50.16 1600 1600 1700 VRRM , VR (V) Max. rep. peak reverse voltage Part Number This datasheet applies to: Metric thread: A1A:50.XX, A1B:50.XX Inch thread: A2A:50.XX, A2B:50.XX MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 180 C -40 to 180 C Max. Av. current 50 A @ Max. TC 125 C 95 A 640 50 Hz half cycle sine wave 697 60 Hz half cycle sine wave 762 50 Hz half cycle sine wave 830 60 Hz half cycle sine wave 1.87 t = 10ms 2.04 t = 8.3 ms 2.65 t = 10ms 2.89 t = 8.3 ms 20 kA2s1/2 4(~30) N.m(Lbf.in) Initial TJ = 180 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA2s Initial TJ = 180 C, rated VRRM applied after surge. Initial TJ = 180 C, no voltage applied after surge. NOTES Initial TJ = 180 C, rated VRRM applied after surge. A 180 half sine wave Initial TJ = 180 C, no voltage applied after surge. IF(AV) PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current

O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics O O O SEMICONDUTORES LTDA. AEGIS A1A:50.XX CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- 1.35 1.50 V VF(TO)1 Low-level threshold --- --- 0.88 VF(TO)2 High-level threshold --- --- 1.02 rF1 Low-level resistance --- --- 2.50 rF2 High-level resistance --- --- 1.53 IRM Peak reverse current --- --- 4.00 mA --- --- 0.85 C/W --- --- 1.00 C/W --- --- 1.20 C/W RthCS Thermal resistance, case-to-sink --- --- 0.20 C/W wt Weight --- 30(1.06) --- g(oz.) Case Style DO-203AB (DO-5) JEDEC RthJC Thermal resistance, junction-to-case V mW DC operation 180 sine wave 120 rectangular wave Initial TJ = 25 C, sinusoidal wave, Ipeak = 157A. Use low values for IFM < pIF(AV) TJ = 180 C. Max. Rated VRRM TEST CONDITIONS Mtg. Surface smooth, flat and greased. Single side. --- --- TJ = 180 C Av. power = VF(TO) * IF(AV) +rF * [IF(RMS)]2 0 5 10 15 20 25 30 35 40 45 50 55 60 65 110 115 120 125 130 135 140 145 150 155 160 165 170 175 180 180º 120º 90º 60º 30º Maximum Allowable Case Temperature *Sinusoidal waveform Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 20 40 60 80 100 105 110 115 120 125 130 135 140 145 150 155 160 165 170 175 180 DC180º 120º 90º 60º 30º *Rectangular waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance 100 Forward Voltage Drop Characteristics 180ºC 25ºC Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) SEMICONDUTORES LTDA. AEGIS A1A:50.XX 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1E-3 0.01 0.1 1 10 100 Transient Thermal Impedance Zthjc Zthjh Time (s) Transient Thermal Impedance (ºC / W) 0 20 40 60 80 100 100 200 300 400 500 180º 120º 90º 60º 30º Maximum Average Forward Power Loss *Sinusoidal waveform Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 20 40 60 80 100 100 150 200 250 300 350 400 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics

M8 x 1.25 1/4" UNF 2A DO-5 SEMICONDUTORES LTDA. AEGIS A1A:50.XX Fig. 7 - Outline Characteristics