A1A:400.30

A1A:400.18 AEGIS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

SEMICONDUTORES LTDA. AEGIS A1A:400.XX O O O O O O O O O O O O This datasheet applies to: Metric thread: A1A:400.XX, A1B:400.XX Inch thread: A2A:400.XX, A2B:400.XX VOLTAGE RATINGS VRSM , VR (V) Max. non- rep. peak reverse voltage TJ = 0 to 180 C TJ = -40 to 0 C TJ = 25 to 180 C A1A:400.18 1800 1800 1900 A1A:400.20 2000 2000 2100 A1A:400.22 2200 2200 2300 A1A:400.24 2400 2400 2500 A1A:400.26 2600 2600 2700 A1A:400.28 2800 2800 2900 A1A:400.30 3000 3000 3100 VRRM , VR (V) Max. rep. peak reverse voltage Part Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 180 C -40 to 180 C Max. Av. current 400 A @ Max. TC 125 C 800 A 8.56 50 Hz half cycle sine wave 9.33 60 Hz half cycle sine wave 10.18 50 Hz half cycle sine wave 11.10 60 Hz half cycle sine wave 303 t = 10ms 331 t = 8.3 ms 429 t = 10ms 468 t = 8.3 ms 3800 kA2s1/2 60(~534) N.m(Lbf.in) Initial TJ = 180 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA2s Initial TJ = 180 C, rated VRRM applied after surge. Initial TJ = 180 C, no voltage applied after surge. NOTES Initial TJ = 180 C, rated VRRM applied after surge. kA 180 half sine wave Initial TJ = 180 C, no voltage applied after surge. IF(AV) PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current

PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- --- 1.45 V VF(TO) Threshold voltage --- --- 0.97 V rF Forward slope resistance --- --- 0.30 mW IRM Peak reverse current --- --- 45.00 mA --- --- 0.11 C/W --- --- 0.12 C/W --- --- 0.13 C/W RthCS Thermal resistance, case-to-sink --- --- 0.010 C/W wt Weight --- 500(17.5) --- g(oz.) Case Style DO-205AD (DO-13) JEDEC RthJC Thermal resistance, junction-to-case DC operation 180 sine wave 120 rectangular wave Initial TJ = 25 C, sinusoidal wave, Ipeak = 1257A. Use low values for IFM < pIF(AV) TJ = 180 C. Max. Rated VRRM TEST CONDITIONS Mtg. Surface smooth, flat and greased. Single side. --- --- TJ = 180 C, Av. Power = V F(TO)*IF(AV)+rF*[IF(RMS)]2, sine. O O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics SEMICONDUTORES LTDA. AEGIS A1A:400.XX 0 50 100 150 200 250 300 350 400 450 500 550 100 110 120 130 140 150 160 170 180 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 50 100150200250300350400450500550600650700750800 100 110 120 130 140 150 160 170 180 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics SEMICONDUTORES LTDA. AEGIS A1A:400.XX 0 200 400 600 800 500 1000 1500 2000 2500 3000 3500 4000 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 200 400 600 800 500 1000 1500 2000 2500 3000 3500 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 100 1000 10000 180º 25ºC Forward Voltage Drop Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s)

M24 x 1.5 DO-205AD (DO-13) Fig. 7 - Outline Characteristics SEMICONDUTORES LTDA. AEGIS A1A:400.XX