A1A:340.02 AEGIS | Alldatasheet
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SEMICONDUTORES LTDA. AEGIS A1A:340.XX O O O O O O O O O O O O MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 175 C -40 to 175 C Max. Av. current 340 A @ Max. TC 150 C 700 A 7798 50 Hz half cycle sine wave 8500 60 Hz half cycle sine wave 9275 50 Hz half cycle sine wave 10110 60 Hz half cycle sine wave 276 t = 10ms 301 t = 8.3 ms 391 t = 10ms 426 t = 8.3 ms 3200 kA2s1/2 30(~267) N.m(Lbf.in) PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current A 180 half sine wave Initial TJ = 175 C, no voltage applied after surge. IF(AV) NOTES Initial TJ = 175 C, rated VRRM applied after surge. Initial TJ = 175 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA2s Initial TJ = 175 C, rated VRRM applied after surge. Initial TJ = 175 C, no voltage applied after surge. This datasheet applies to: Metric thread: A1A:340.XX, A1B:340.XX Inch thread: A2A:340.XX, A2B:340.XX VOLTAGE RATINGS VRSM , VR (V) Max. non- rep. peak reverse voltage TJ = 0 to 175 C TJ = -40 to 0 C TJ = 25 to 175 C A1A:340.02 200 200 300 A1A:340.04 400 400 500 A1A:340.06 600 600 700 A1A:340.08 800 800 900 A1A:340.10 1000 1000 1100 A1A:340.12 1200 1200 1300 A1A:340.14 1400 1400 1500 A1A:340.16 1600 1600 1700 VRRM , VR (V) Max. rep. peak reverse voltage Part Number
Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Forward Current (A) 0 100 200 300 400 500 600 700 800 100 150 200 250 300 350 400 450 500 550 600 650 Sen60 Rec60 Sen120 Rec120 Sen180 Rec180 DC Maximum Forward Power Dissipation Forward Current (A) Maximum Froward Power Dissipation (W) O O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Forward Power Loss Characteristics CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- 1.15 1.37 V VF(TO) Threshold voltage --- --- 0.97 V rF Forward slope resistance --- --- 0.32 mW IRM Peak reverse current --- --- 30.00 mA --- --- 0.15 C/W --- --- 0.17 C/W --- --- 0.19 C/W RthCS Thermal resistance, case-to-sink --- --- 0.03 C/W wt Weight --- 250(8.75) --- g(oz.) Case Style DO-205AB (DO-9) JEDEC RthJC Thermal resistance, junction-to-case DC operation 180 sine wave 120 rectangular wave Initial TJ = 25 C, sinusoidal wave, Ipeak = 1068A. Use low values for IFM < pIF(AV) TJ = 175 C. Max. Rated VRRM TEST CONDITIONS Mtg. Surface smooth, flat and greased. Single side. --- --- TJ = 175 C, Av. Power = V F(TO)*IF(AV)+rF*[IF(RMS)]2, sine. SEMICONDUTORES LTDA. AEGIS A1A:340.XX
Fig. 3 - Forward Voltage Drop Characteristics Fig. 4 - Transient Thermal Impedance Characteristics 100 1000 0.5 1.0 1.5 2.0 Forward Current vs. Forward Voltage 175ºC 25ºC Forward Voltage (V) Forward Current (A) 1E-3 0.01 0.1 1 10 100 0.00 0.05 0.10 0.15 0.20 Rthjh Rthjc Transient Thermal Impedance Transient Thermal Impedance (ºC/W) Time (s) DO-205AB (DO-9) SEMICONDUTORES LTDA. AEGIS A1A:340.XX