A1A:22.14

A1A:22.02 AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A1A:22.XX O O O O O O O O O O O O This datasheet applies to: Metric thread: A1A:22.XX, A1B:22.XX Inch thread: A2A:22.XX, A2B:22.XX VOLTAGE RATINGS VRSM , VR (V) Max. non- rep. peak reverse voltage TJ = 0 to 180 C TJ = -40 to 0 C TJ = 25 to 180 C A1A:22.02 200 200 300 A1A:22.04 400 400 500 A1A:22.06 600 600 700 A1A:22.08 800 800 900 A1A:22.10 1000 1000 1100 A1A:22.12 1200 1200 1300 A1A:22.14 1400 1400 1500 A1A:22.16 1600 1600 1700 VRRM , VR (V) Max. rep. peak reverse voltage Part Number K MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 180 C -40 to 180 C Max. Av. current 22 A @ Max. TC 125 C 43 A 0.32 50 Hz half cycle sine wave 0.35 60 Hz half cycle sine wave 0.39 50 Hz half cycle sine wave 0.42 60 Hz half cycle sine wave 0.47 t = 10ms 0.51 t = 8.3 ms 0.66 t = 10ms 0.72 t = 8.3 ms 5.5 kA2s1/2 2(~15) N.m(Lbf.in) Initial TJ = 180 C, no voltage applied after surge. I2t for time tx = I2t1/2 * tx 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA2s Initial TJ = 180 C, rated VRRM applied after surge. Initial TJ = 180 C, no voltage applied after surge. NOTES Initial TJ = 180 C, rated VRRM applied after surge. kA 180 half sine wave Initial TJ = 180 C, no voltage applied after surge. IF(AV) PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current

O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics O O O CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- 1.35 1.50 V VF(TO)1 Low-level threshold --- --- 0.85 VF(TO)2 High-level threshold --- --- 1.00 rF1 Low-level resistance --- --- 10.00 rF2 High-level resistance --- --- 5.00 IRM Peak reverse current --- --- 3.00 mA --- --- 2.00 C/W --- --- 2.60 C/W --- --- 2.90 C/W RthCS Thermal resistance, case-to-sink --- --- 1.00 C/W wt Weight --- 9(0.32) --- g(oz.) Case Style DO-203AA (DO-4) JEDEC RthJC Thermal resistance, junction-to-case V mW DC operation 180 sine wave 120 rectangular wave Initial TJ = 25 C, sinusoidal wave, Ipeak = 69A. Use low values for IFM < pIF(AV) TJ = 180 C. Max. Rated VRRM TEST CONDITIONS Mtg. Surface smooth, flat and greased. Single side. --- --- TJ = 180 C Av. power = VF(TO) * IF(AV) +rF * [IF(RMS)]2 SEMICONDUTORES LTDA. AEGIS A1A:22.XX 0 2 4 6 8 10 12 14 16 18 20 22 24 26 100 110 120 130 140 150 160 170 180 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 10 20 30 40 100 110 120 130 140 150 160 170 180 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A)

180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 10 20 30 40 100 150 200 250 300 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics SEMICONDUTORES LTDA. AEGIS A1A:22.XX Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics 100 1000 180ºC 25ºC Forward Voltage Drop Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1E-3 0.01 0.1 1 10 100 Zthjc Zthjh Transient Thermal Impedance Time (s) Transient Thermal Impedance (ºC/W)

SEMICONDUTORES LTDA. AEGIS A1A:22.XX Fig. 7 - Outline Characteristics DO-203AA (DO-4)