A1A:180.02 AEGIS | Alldatasheet

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SEMICONDUTORES LTDA. AEGIS A1A:180.XX O O O O O O O O O O O O This datasheet applies to: Metric thread: A1A:180.XX, A1B:180.XX Inch thread: A2A:180.XX, A2B:180.XX VOLTAGE RATINGS VRSM ,V R (V) Max. non- rep. peak reverse voltage TJ =0t o1 5 0C TJ = -40 to 0 C T J =2 5t o1 5 0C A1A:180.02 200 200 300 A1A:180.04 400 400 500 A1A:180.06 600 600 700 A1A:180.08 800 800 900 A1A:180.10 1000 1000 1100 A1A:180.12 1200 1200 1300 A1A:180.14 1400 1400 1500 A1A:180.16 1600 1600 1700 A1A:180.18 1800 1800 1900 A1A:180.20 2000 2000 2100 A1A:180.22 2200 2200 2300 V RRM ,V R (V) Max. rep. peak reverse voltagePart Number MAXIMUM ALLOWABLE RATINGS VALUE UNITS -40 to 150 C -40 to 150 C Max. Av. current 180 A @ Max. T C 125 C 235 A 3000 50 Hz half cycle sine wave 3140 60 Hz half cycle sine wave 3570 50 Hz half cycle sine wave 3740 60 Hz half cycle sine wave 45 t = 10ms 41 t = 8.3 ms 64 t = 10ms 58 t = 8.3 ms 640 kA 2s1/2 10(~89) N.m(Lbf.in) PARAMETER TJ Junction Temperature Tstg Storage Temperature IFSM Max. Peak non-rep. surge current A 180 half sine wave Initial TJ = 150 C, no voltage applied after surge. IF(AV) NOTES Initial TJ = 150 C, rated VRRM applied after surge. Initial TJ = 150 C, no voltage applied after surge. I2t for time tx =I 2t1/2 *t x 1/2. (0.1 < tx < 10ms).I2t1/2 Max. I2t1/2 capability F Mounting Force IF(RMS) Nom. RMS current - I2t Max. I2t capability kA 2s Initial TJ = 150 C, rated VRRM applied after surge. Initial TJ = 150 C, no voltage applied after surge.

O O O O O O O O O Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics SEMICONDUTORES LTDA. AEGIS A1A:180.XX CHARACTERISTICS PARAMETER MIN. TYP. MAX. UNITS VFM Peak forward voltage --- --- 1.33 V VF(TO) Threshold voltage --- --- 0.67 V rF Forward slope resistance --- --- 1.42 m/c87 IRM Peak reverse current --- 10 20.00 mA --- --- 0.35 C/W --- --- 0.40 C/W --- --- 0.43 C/W R thCS Thermal resistance, case-to-sink --- --- 0.08 C/W wt Weight --- 100(3.5) --- g(oz.) Case Style DO-205AA (DO-8) JEDEC RthJC Thermal resistance, junction-to-case DC operation 180 sine wave 120 rectangular wave Initial T J = 25 C, sinusoidal wave, Ipeak = 566A. Use low values for IFM < /c112IF(AV) TJ = 150 C. Max. Rated VRRM TEST CONDITIONS Mtg. Surface smooth, flat and greased. Single side. --- --- TJ = 150 C, Av. Power = VF(TO)*IF(AV)+rF*[IF(RMS)]2, sine. 0 20 40 60 80 100 120 140 160 180 200 120 130 140 150 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Forward Current (A) 0 50 100 150 200 250 300 110 120 130 140 150 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Allowable Case Temperature Maximum Allowable Case Temperature (ºC) Average Froward Current (A)

Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Forward Voltage Drop Characteristics F i g .6-Transient Thermal Impedance Characteristics SEMICONDUTORES LTDA. AEGIS A1A:180.XX 100 1000 TJ =1 2 5 º C TJ =2 5 º C Forward Voltage Drop Characteristics Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) 1E-3 0.01 0.1 1 10 0.01 0.1 Transient Thermal Impedance ZthJC Transient Thermal Impedance ZthJC (ºC/W) Time (s) 0 50 100 150 200 250 200 400 600 800 1000 1200 1400 1600 180º 120º 90º 60º 30º *Sinusoidal waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A) 0 50 100 150 200 250 200 400 600 800 1000 1200 1400 DC 180º 120º 90º 60º 30º *Rectangular waveform Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Average Forward Current (A)

DO-205AA (DO-8) SEMICONDUTORES LTDA. AEGIS A1A:180.XX